STMicroelectronics Discovery kit for STM32L151/152 line - with STM32L152RC MCU STM32L152C-DISCO STM32L152C-DISCO Hoja De Datos

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The parameters given in the following table are derived from the tests performed under the 
ambient temperature condition summarized in 

.

           

T

A 

Temperature range

Maximum power 
dissipation 

–40 85

°C

Low power dissipation

(5)

–40 105

T

J 

Junction temperature range

-40 °C 

 T

A 

 105 °C

–40 

105

°C

1. When the ADC is used, refer to 

.

2. It is recommended to power V

DD

 and V

DDA

 from the same source. A maximum difference of 300 mV 

between V

DD

 and V

DDA

 can be tolerated during power-up and up to 140 mV in operation.

3. To sustain a voltage higher than VDD+0.3V, the internal pull-up/pull-down resistors must be disabled

4. If T

A

 is lower, higher P

D

 values are allowed as long as T

J

 does not exceed T

J 

).

5. In low power dissipation state, T

A

 can be extended to this range as long as T

J

 does not exceed T

J 

max (see 

).

 

t

VDD

(1)

V

DD

 rise time rate

BOR detector enabled

0

-



µs/V

BOR detector disabled

0

-

1000

V

DD

 fall time rate

BOR detector enabled

20

-



BOR detector disabled

0

-

1000

T

RSTTEMPO

Reset temporization

V

DD

 rising, BOR enabled

-

2

3.3

ms

V

DD

 rising, BOR disabled

(2)

0.4

0.7

1.6

V

POR/PDR

Power on/power down reset 
threshold

Falling edge

1

1.5

1.65

V

Rising edge

1.3

1.5

1.65

V

BOR0

Brown-out reset threshold 0

Falling edge

1.67

1.7

1.74

Rising edge

1.69

1.76

1.8

V

BOR1

Brown-out reset threshold 1

Falling edge

1.87

1.93

1.97

Rising edge

1.96

2.03

2.07

V

BOR2

Brown-out reset threshold 2

Falling edge

2.22

2.30

2.35

Rising edge

2.31

2.41

2.44