STMicroelectronics Discovery kit for STM32L151/152 line - with STM32L152RC MCU STM32L152C-DISCO STM32L152C-DISCO Hoja De Datos
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STM32L152C-DISCO
DocID022799 Rev 6
STM32L15xCC STM32L15xRC STM32L15xUC STM32L15xVC
Electrical characteristics
111
Flash memory and data EEPROM
Table 36. Flash memory and data EEPROM characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
(1)
1. Guaranteed by design, not tested in production.
Unit
V
DD
Operating voltage
Read / Write / Erase
Read / Write / Erase
-
1.65
-
3.6
V
t
prog
Programming time for
word or half-page
word or half-page
Erasing
-
3.28
3.94
ms
Programming
-
3.28
3.94
I
DD
Average current during
the whole programming /
erase operation
the whole programming /
erase operation
T
A
25 °C, V
DD
= 3.6 V
-
600
900
µA
Maximum current (peak)
during the whole
programming / erase
operation
during the whole
programming / erase
operation
-
1.5
2.5
mA
Table 37. Flash memory and data EEPROM endurance and retention
Symbol
Parameter
Conditions
Value
Unit
Min
(1)
1. Based on characterization not tested in production.
Typ Max
N
CYC
Cycling (erase / write)
Program memory
T
A
-40°C to
105 °C
10
-
-
kcycles
Cycling (erase / write)
EEPROM data memory
300
-
-
t
RET
(2)
2. Characterization is done according to JEDEC JESD22-A117.
Data retention (program memory) after
10 kcycles at T
10 kcycles at T
A
= 85 °C
T
RET
= +85 °C
30
-
-
years
Data retention (EEPROM data memory)
after 300 kcycles at T
after 300 kcycles at T
A
= 85 °C
30
-
-
Data retention (program memory) after
10 kcycles at T
10 kcycles at T
A
= 105 °C
T
RET
= +105 °C
10
-
-
Data retention (EEPROM data memory)
after 300 kcycles at T
after 300 kcycles at T
A
= 105 °C
10
-
-