Nxp Semiconductors BU2506DX BU Transistor NPN SOT 399 (TOP 3D) 5A 700V BU2506DX Hoja De Datos
![Nxp Semiconductors](https://files.manualsbrain.com/attachments/fccaa96c7791e96162626b2f8f54b82bf96e15b2/common/fit/150/50/deab3bab3bb4be851ec901ed1b8a87b96e9414e9dda8a447d23580407a5f/brand_logo.gif)
Los códigos de productos
BU2506DX
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2506DX
THERMAL RESISTANCES
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
R
th j-hs
Junction to heatsink
without heatsink compound
-
3.7
K/W
R
th j-hs
Junction to heatsink
with heatsink compound
-
2.8
K/W
R
th j-a
Junction to ambient
in free air
32
-
K/W
ISOLATION LIMITING VALUE & CHARACTERISTIC
T
hs
= 25 ˚C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
isol
Repetitive peak voltage from all
R.H.
≤
65 % ; clean and dustfree
-
2500
V
three terminals to external
heatsink
heatsink
C
isol
Capacitance from T2 to external f = 1 MHz
-
22
-
pF
heatsink
STATIC CHARACTERISTICS
T
hs
= 25 ˚C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
I
CES
Collector cut-off current
2
V
BE
= 0 V; V
CE
= V
CESMmax
-
-
1.0
mA
I
CES
V
BE
= 0 V; V
CE
= V
CESMmax
;
-
-
2.0
mA
T
j
= 125 ˚C
I
EBO
Emitter cut-off current
V
EB
= 7.5 V; I
C
= 0 A
-
136
-
mA
BV
EBO
Emitter-base breakdown voltage
I
B
= 600 mA
7.5
13.5
-
V
R
be
Base-emitter resistance
V
EB
= 7.5 V
-
55
-
Ω
V
CEOsust
Collector-emitter sustaining voltage
I
B
= 0 A; I
C
= 100 mA;
700
-
-
V
L = 25 mH
V
CEsat
Collector-emitter saturation voltage
I
C
= 3.0 A; I
B
= 0.79 A
-
-
5.0
V
V
BEsat
Base-emitter saturation voltage
I
C
= 3.0 A; I
B
= 0.79 A
-
-
1.1
V
h
FE
DC current gain
I
C
= 0.3 A; V
CE
= 5 V
-
12
-
h
FE
I
C
= 3.0 A; V
CE
= 5 V
3.8
5.5
7.5
V
F
Diode forward voltage
I
F
= 3.0 A
-
1.6
2.0
V
DYNAMIC CHARACTERISTICS
T
hs
= 25 ˚C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
C
c
Collector capacitance
I
E
= 0 A; V
CB
= 10 V; f = 1 MHz
47
-
pF
Switching times (line
deflection
I
Csat
= 3.0 A; L
C
= 1.35 mH;
circuit)
C
FB
= 9.4 nF; I
B(end)
= 0.67 A;
L
B
= 8
µ
H; -V
BB
= 4 V;
(-dI
B
/dt = 0.45 A/
µ
s)
t
s
Turn-off storage time
4.5
6.0
µ
s
t
f
Turn-off fall time
0.25
0.5
µ
s
2 Measured with half sine-wave voltage (curve tracer).
September 1997
2
Rev 2.400