Nxp Semiconductors BU2506DX BU Transistor NPN SOT 399 (TOP 3D) 5A 700V BU2506DX Data Sheet
Product codes
BU2506DX
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2506DX
THERMAL RESISTANCES
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
R
th j-hs
Junction to heatsink
without heatsink compound
-
3.7
K/W
R
th j-hs
Junction to heatsink
with heatsink compound
-
2.8
K/W
R
th j-a
Junction to ambient
in free air
32
-
K/W
ISOLATION LIMITING VALUE & CHARACTERISTIC
T
hs
= 25 ˚C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
isol
Repetitive peak voltage from all
R.H.
≤
65 % ; clean and dustfree
-
2500
V
three terminals to external
heatsink
heatsink
C
isol
Capacitance from T2 to external f = 1 MHz
-
22
-
pF
heatsink
STATIC CHARACTERISTICS
T
hs
= 25 ˚C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
I
CES
Collector cut-off current
2
V
BE
= 0 V; V
CE
= V
CESMmax
-
-
1.0
mA
I
CES
V
BE
= 0 V; V
CE
= V
CESMmax
;
-
-
2.0
mA
T
j
= 125 ˚C
I
EBO
Emitter cut-off current
V
EB
= 7.5 V; I
C
= 0 A
-
136
-
mA
BV
EBO
Emitter-base breakdown voltage
I
B
= 600 mA
7.5
13.5
-
V
R
be
Base-emitter resistance
V
EB
= 7.5 V
-
55
-
Ω
V
CEOsust
Collector-emitter sustaining voltage
I
B
= 0 A; I
C
= 100 mA;
700
-
-
V
L = 25 mH
V
CEsat
Collector-emitter saturation voltage
I
C
= 3.0 A; I
B
= 0.79 A
-
-
5.0
V
V
BEsat
Base-emitter saturation voltage
I
C
= 3.0 A; I
B
= 0.79 A
-
-
1.1
V
h
FE
DC current gain
I
C
= 0.3 A; V
CE
= 5 V
-
12
-
h
FE
I
C
= 3.0 A; V
CE
= 5 V
3.8
5.5
7.5
V
F
Diode forward voltage
I
F
= 3.0 A
-
1.6
2.0
V
DYNAMIC CHARACTERISTICS
T
hs
= 25 ˚C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
C
c
Collector capacitance
I
E
= 0 A; V
CB
= 10 V; f = 1 MHz
47
-
pF
Switching times (line
deflection
I
Csat
= 3.0 A; L
C
= 1.35 mH;
circuit)
C
FB
= 9.4 nF; I
B(end)
= 0.67 A;
L
B
= 8
µ
H; -V
BB
= 4 V;
(-dI
B
/dt = 0.45 A/
µ
s)
t
s
Turn-off storage time
4.5
6.0
µ
s
t
f
Turn-off fall time
0.25
0.5
µ
s
2 Measured with half sine-wave voltage (curve tracer).
September 1997
2
Rev 2.400