Fairchild Semiconductor N/A FSB560A データシート

Fairchild Semiconductor

製品コード

FSB560A

F

S

B

5

6

0

/F

S

B

5

6

0

A

—
N

P

N

L

o

w

S

a

tu

ra

tio

n

T

ra

n

s

is

to

r

© 2009 Fairchild Semiconductor Corporation

www.fairchildsemi.com

FSB560/FSB560A Rev. B2

2

Electrical Characteristics

T

A

=25°C unless otherwise noted

* Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0%

Symbol

Parameter

Test Conditions

Min.

Max.

Units

Off Characteristics

BV

CEO

Collector-Emitter Breakdown Voltage I

C

= 10mA

60

V

BV

CBO

Collector-Base Breakdown Voltage

I

C

= 100

µ

A

80

V

BV

EBO

Emitter-Base Breakdown Voltage

I

E

= 100

µ

A

5

V

I

CBO

Collector Cutoff Current

V

CB

= 30V

V

CB

= 30V, T

A

= 100

°

C

100

10

nA

µ

A

I

EBO

Emitter Cutoff Current

V

EB

= 4V

100

nA

On Characteristics*

h

FE

DC Current Gain

I

C

= 100mA, V

CE

= 2V

I

C

= 500mA, V

CE

= 2V FSB560

FSB560A
I

C

= 1A, V

CE

= 2V

I

C

= 2A, V

CE

= 2V

70

100
250

80
40

300
550

V

CE

(sat)

Collector-Emitter Saturation Voltage

I

C

= 1A, I

B

= 100mA

I

C

= 2A, I

B

= 200mA FSB560

FSB560A

300
350
300

mV
mV
mV

V

BE

(sat)

Base-Emitter Saturation Voltage

I

C

= 1A, I

B

= 100mA

1.25

V

V

BE

(on)

Base-Emitter On Voltage

I

C

= 1A, V

CE

= 2V

1

V

Small Signal Characteristics

C

obo

Output Capacitance

V

CB

= 10V, I

E

= 0, f = 1MHz

30

pF

f

T

Transition Frequency

I

C

= 100mA, V

CE

= 5V, f = 100MHz

75

MHz