Fairchild Semiconductor N/A FSB560A データシート
製品コード
FSB560A
F
S
B
5
6
0
/F
S
B
5
6
0
A
—
N
N
P
N
L
o
w
S
a
tu
ra
tio
n
T
ra
n
s
is
to
r
© 2009 Fairchild Semiconductor Corporation
www.fairchildsemi.com
FSB560/FSB560A Rev. B2
3
Typical Performance Characteristics
Figure 1. Base-Emitter Saturation Voltage
vs Collector Current
Figure 2. Base-Emitter On Voltage
vs Collector Current
Figure 3. Collector-Emitter Saturation Voltage
vs Collector Current
Figure 4. Input/Output Capacitance
vs Reverse Bias Voltage
Figure 5. Current Gain vs Collector Current
Figure 6. Current Gain vs Collector Current
Base-Emitter Saturation
Voltage vs Collector Current
0.001
0.01
0.1
1
10
0.2
0.4
0.6
0.8
1
1.2
1.4
I - COLLECTOR CURRENT (A)
V
-B
A
S
E
-E
M
IT
T
E
R
S
A
T
U
R
A
T
IO
N
V
O
L
T
A
G
E
(V
)
C
B
E
S
A
T
25 °C
- 40 °C
125 °C
β = 10
Base-Emitter On Voltage vs.
Collector Current
0.0001
0.001
0.01
0.1
1
10
0.2
0.4
0.6
0.8
1
1.2
1.4
I - COLLECTOR CURRENT (A)
V
-
B
A
S
E
-E
M
IT
T
E
R
O
N
V
O
L
T
A
G
E
(
V
)
C
B
E
O
N
25 °C
- 40 °C
125 °C
V = 2.0V
ce
Collector-Emitter Saturation
Voltage vs Collector Current
0.001
0.01
0.1
1
10
0
0.2
0.4
0.6
0.8
I - COLLECTOR CURRENT (mA)
V
-
C
O
L
L
E
C
T
O
R
-E
M
IT
T
E
R
V
O
L
T
A
G
E
(
V
)
C
C
E
S
A
T
- 40°C
25°C
125°C
β = 10
(mA)
Input/Output Capacitance vs.
Reverse Bias Voltage
0.1
0.2
0.5
1
2
5
10
20
50
100
0
50
100
150
200
250
300
350
400
450
V - COLLECTOR VOLTAGE (V)
C
A
P
A
C
IT
A
N
C
E
(
p
f)
CE
f = 1.0 MHz
C
ibo
C
obo
0.001
0.010
0.100
1.000
10.000
0
100
200
300
400
FSB560
-40
o
C
V
CE
= 2 V
T
A
=150
o
C
25
o
C
h
F
E
-
D
C
C
U
R
R
E
N
T
G
A
IN
I
C
- COLLECTOR CURRENT [A]
0.001
0.010
0.100
1.000
10.000
0
100
200
300
400
500
600
700
FSB560A
-40
o
C
V
CE
= 2 V
T
A
=125
o
C
25
o
C
h
F
E
-
D
C
C
U
R
R
E
N
T
G
A
IN
I
C
- COLLECTOR CURRENT [A]