Nxp Semiconductors BU2506DX BU Transistor NPN SOT 399 (TOP 3D) 5A 700V BU2506DX 数据表
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产品代码
BU2506DX
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2506DX
GENERAL DESCRIPTION
Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated
damper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television
receivers. Features exceptional tolerance to base drive and collector current load variations resulting in a very low
worst case dissipation.
damper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television
receivers. Features exceptional tolerance to base drive and collector current load variations resulting in a very low
worst case dissipation.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
V
CESM
Collector-emitter voltage peak value
V
BE
= 0 V
-
1500
V
V
CEO
Collector-emitter voltage (open base)
-
700
V
I
C
Collector current (DC)
-
5
A
I
CM
Collector current peak value
-
8
A
P
tot
Total power dissipation
T
hs
≤
25 ˚C
-
45
W
V
CEsat
Collector-emitter saturation voltage
I
C
= 3.0 A; I
B
= 0.79 A
-
5
V
I
Csat
Collector saturation current
3.0
-
A
V
F
Diode forward voltage
I
F
= 3.0 A
1.6
2.0
V
t
f
Fall time
I
Csat
= 3.0 A; I
B(end)
= 0.67 A
0.25
0.5
µ
s
PINNING - SOT399
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
base
2
collector
3
emitter
case isolated
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CESM
Collector-emitter voltage peak value
V
BE
= 0 V
-
1500
V
V
CEO
Collector-emitter voltage (open base)
-
700
V
I
C
Collector current (DC)
-
5
A
I
CM
Collector current peak value
-
8
A
I
B
Base current (DC)
-
3
A
I
BM
Base current peak value
-
5
A
-I
B(AV)
Reverse base current
average over any 20 ms period
-
100
mA
-I
BM
Reverse base current peak value
1
-
4
A
P
tot
Total power dissipation
T
hs
≤
25 ˚C
-
45
W
T
stg
Storage temperature
-55
150
˚C
T
j
Junction temperature
-
150
˚C
case
1 2 3
b
c
e
Rbe
1 Turn-off current.
September 1997
1
Rev 2.400