Nxp Semiconductors BU2506DX BU Transistor NPN SOT 399 (TOP 3D) 5A 700V BU2506DX Data Sheet
Product codes
BU2506DX
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2506DX
GENERAL DESCRIPTION
Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated
damper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television
receivers. Features exceptional tolerance to base drive and collector current load variations resulting in a very low
worst case dissipation.
damper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television
receivers. Features exceptional tolerance to base drive and collector current load variations resulting in a very low
worst case dissipation.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
V
CESM
Collector-emitter voltage peak value
V
BE
= 0 V
-
1500
V
V
CEO
Collector-emitter voltage (open base)
-
700
V
I
C
Collector current (DC)
-
5
A
I
CM
Collector current peak value
-
8
A
P
tot
Total power dissipation
T
hs
≤
25 ˚C
-
45
W
V
CEsat
Collector-emitter saturation voltage
I
C
= 3.0 A; I
B
= 0.79 A
-
5
V
I
Csat
Collector saturation current
3.0
-
A
V
F
Diode forward voltage
I
F
= 3.0 A
1.6
2.0
V
t
f
Fall time
I
Csat
= 3.0 A; I
B(end)
= 0.67 A
0.25
0.5
µ
s
PINNING - SOT399
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
base
2
collector
3
emitter
case isolated
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CESM
Collector-emitter voltage peak value
V
BE
= 0 V
-
1500
V
V
CEO
Collector-emitter voltage (open base)
-
700
V
I
C
Collector current (DC)
-
5
A
I
CM
Collector current peak value
-
8
A
I
B
Base current (DC)
-
3
A
I
BM
Base current peak value
-
5
A
-I
B(AV)
Reverse base current
average over any 20 ms period
-
100
mA
-I
BM
Reverse base current peak value
1
-
4
A
P
tot
Total power dissipation
T
hs
≤
25 ˚C
-
45
W
T
stg
Storage temperature
-55
150
˚C
T
j
Junction temperature
-
150
˚C
case
1 2 3
b
c
e
Rbe
1 Turn-off current.
September 1997
1
Rev 2.400