Epson S1D13708 Benutzerhandbuch

Epson Research and Development

Page 205

Vancouver Design Center

Hardware Functional Specification

S1D13708

Issue Date: 02/03/07

X39A-A-001-02

The following shows an example of a “memory read” with Mode 80, Little endian.

Figure 15-10 Sample timing of “memory read” with mode 80, Little endian

1. write register number of Memory Access Pointer 0 (REG[C0h]) (command write).

2. write memory address 0 to the high byte and memory address 1 to the low byte

(MA[15:0]) (data write).

3. write register number of Memory Access Pointer 2 (REG[C2h]) (command write).

4. write memory address 2 (MA16) to the low byte (data write).

5. write register number of Memory Access Start register (REG[C4h]) (command write).

Note

No “data write” is required after a command write to the Memory Access Start register
(REG[C4h]). This step configures the S1D13708 for burst memory access beginning
with the next data write.

CS#

WRU#

WRL#

RDU#

RDL#

D[7:0]

D[15:8]

REG[C0h]

Data Write

word access

Command

Data Write

byte access

even number

memory data

Data Read

byte access

word access

memory data memory data

memory data

Address +2

byte access

memory data

odd address

even address odd address even address

even address

Write

Command

Write

Command

Write

REG[C4h]

REG[C2h]

even number

(word)

Address +2

(word)

Address +1

(byte)

Address +1

(byte)

STEP