Texas Instruments THS7364 Evaluation Module THS7364EVM THS7364EVM Datenbogen
Produktcode
THS7364EVM
www.ti.com
SBOS530 – AUGUST 2010
ELECTRICAL CHARACTERISTICS: V
S+
= +5 V (continued)
At T
A
= +25°C, R
L
= 150
Ω
to GND, Filter mode, and dc-coupled input/output, unless otherwise noted.
THS7364
TEST
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNITS
LEVEL
(1)
AC PERFORMANCE (FULL-HD CHANNELS)
Passband bandwidth
–1 dB; V
O
= 0.2 V
PP
and 2 V
PP
53
60
66
MHz
B
Small- and large-signal bandwidth
–3 dB; V
O
= 0.2 V
PP
and 2 V
PP
60
72
83
MHz
B
Bypass mode bandwidth
–3 dB; V
O
= 0.2 V
PP
250
350
MHz
B
Slew rate
Bypass mode; V
O
= 2 V
PP
400
500
V/
m
s
B
With respect to 500 kHz, f = 54 MHz
–0.5
0.4
2
dB
A
Attenuation
With respect to 500 kHz, f = 148 MHz
33
40
dB
A
Group delay
f = 100 kHz
12
ns
C
Group delay variation
f = 54 MHz with respect to 100 kHz
4.5
ns
C
Channel-to-channel delay
0.3
ns
C
Total harmonic distortion
f = 20 MHz, V
O
= 1.4 V
PP
–50
dB
C
100 kHz to 60 MHz, non-weighted
60
dB
C
Signal-to-noise ratio
Unified weighting
70
dB
C
All channels, T
A
= +25°C
5.7
6
6.3
dB
A
Gain
All channels, T
A
= –40°C to +85°C
5.65
6.35
dB
B
f = 60 MHz, Filter mode
9
Ω
C
Output impedance
f = 60 MHz, Bypass mode
9
Ω
C
Disabled
2 || 3
k
Ω
|| pF
C
Return loss
f = 60 MHz, Filter mode
25
dB
C
f = 25 MHz, FHD to SD channels
–55
dB
C
Crosstalk
f = 25 MHz, SD to FHD channels
–70
dB
C
f = 25 MHz, FHD to FHD channels
–45
dB
C
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