Texas Instruments 180 to 100 Pin DIMM Adapter TMDSADAP180TO100 TMDSADAP180TO100 Datenbogen
Produktcode
TMDSADAP180TO100
SPRS825C – OCTOBER 2012 – REVISED FEBRUARY 2014
6.6
Flash Timing – Master Subsystem
Table 6-16. Master Subsystem – Flash/OTP Endurance for T Temperature Material
(1)
ERASE/PROGRAM
MIN
TYP
MAX
UNIT
TEMPERATURE
N
f
Flash endurance for the array (write/erase cycles)
0°C to 105°C (ambient)
20000
50000
cycles
N
OTP
OTP endurance for the array (write cycles)
0°C to 105°C (ambient)
1
write
(1)
Write/erase operations outside of the temperature ranges indicated are not specified and may affect the endurance numbers.
Table 6-17. Master Subsystem – Flash/OTP Endurance for S Temperature Material
(1)
ERASE/PROGRAM
MIN
TYP
MAX
UNIT
TEMPERATURE
N
f
Flash endurance for the array (write/erase cycles)
0°C to 125°C (ambient)
20000
50000
cycles
N
OTP
OTP endurance for the array (write cycles)
0°C to 125°C (ambient)
1
write
(1)
Write/erase operations outside of the temperature ranges indicated are not specified and may affect the endurance numbers.
Table 6-18. Master Subsystem – Flash/OTP Endurance for Q Temperature Material
(1)
ERASE/PROGRAM
MIN
TYP
MAX
UNIT
TEMPERATURE
N
f
Flash endurance for the array (write/erase cycles)
–40°C to 125°C (ambient)
20000
50000
cycles
N
OTP
OTP endurance for the array (write cycles)
–40°C to 125°C (ambient)
1
write
(1)
Write/erase operations outside of the temperature ranges indicated are not specified and may affect the endurance numbers.
Table 6-19. Master Subsystem – Flash Parameters at 75 MHz
(1) (2)
TEST
PARAMETER
MIN
TYP
MAX
UNIT
CONDITIONS
Program Time
(3)
128 bits
280
μs
32K Sector
580
ms
128K Sector
2320
ms
Erase Time
32K Sector
60
ms
128K Sector
60
ms
I
DDP
(4)
V
DD
current consumption during Erase/Program cycle
VREG disabled
105
mA
I
DDIOP
(4)
V
DDIO
current consumption during Erase/Program cycle
55
I
DDIOP
(4)
V
DDIO
current consumption during Erase/Program cycle
VREG enabled
195
mA
(1)
The on-chip flash memory is in an erased state when the device is shipped from TI. As such, erasing the flash memory is not required
prior to programming, when programming the device for the first time. However, the erase operation is needed on all subsequent
programming operations.
prior to programming, when programming the device for the first time. However, the erase operation is needed on all subsequent
programming operations.
(2)
Erase time includes Erase verify by the CPU.
(3)
Program time includes overhead of state machine but does not include data transfer time. Program time assumes programming 144 bits
at a time. Program time includes Program verify by the CPU.
at a time. Program time includes Program verify by the CPU.
(4)
Typical parameters as seen at room temperature including function call overhead, with all peripherals off. It is important to maintain a
stable power supply during the entire flash programming process. It is conceivable that device current consumption during flash
programming could be higher than normal operating conditions. The power supply used should ensure V
stable power supply during the entire flash programming process. It is conceivable that device current consumption during flash
programming could be higher than normal operating conditions. The power supply used should ensure V
MIN
on the supply rails at all
times, as specified in the Recommended Operating Conditions of the data sheet. Any brown-out or interruption to power during
erasing/programming could potentially corrupt the password locations and lock the device permanently. Powering a target board (during
flash programming) through the USB port is not recommended, as the port may be unable to respond to the power demands placed
during the programming process.
erasing/programming could potentially corrupt the password locations and lock the device permanently. Powering a target board (during
flash programming) through the USB port is not recommended, as the port may be unable to respond to the power demands placed
during the programming process.
Copyright © 2012–2014, Texas Instruments Incorporated
Electrical Specifications
139
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