Texas Instruments Evaluation Module for Integrated 3.3V / 5V Power LDO with Clock Output TPS51103EVM TPS51103EVM Datenbogen
Produktcode
TPS51103EVM
7
Bill of Materials
Bill of Materials
www.ti.com
Figure 19. TPS51103EVM Bottom Copper (X-Ray View from Top)
Table 8. TPS51103EVM Bill of Materials
REFDES
VALUE
DESCRIPTION
SIZE
PART NUMBER
MFR
R1, R2
10 k
Ω
Resistor, Chip, 1/16w, 1%
603
std
std
3138-2-00-15-00-
3138-2
Pin, Wiring Terminal
0.09(D) X 0.31 inch
Mill Max
00-080
C1, C2, C4
0.22
µ
F
Capacitor, Ceramic, 50 V, X7R,
±
10%
0603
std
std
C3, C5, C9,
1
µ
F
Capacitor, Ceramic, 25 V, X5R,
±
10%
0603
std
std
C13
C6, C8
0.1
µ
F
Capacitor, Ceramic, 50 V, X7R,
±
10%
0603
std
std
C7, C10, C11,
10
µ
F
Capacitor, Ceramic, 10 V, X5R,
±
20%
0805
std
std
C12
D1
BAV199DW
Diode, Quad Low Leakage, 160-mA, 85-V
SOT363
BAV199DW
Diodes
JP1, JP2
Header, 3-pin, 100-mil spacing, (36-pin strip)
0.100 x 3 inch
PTC36SAAN
Sullins
MOSFET, P-channel, -60 V, -0.33 A, 2
Ω
SOT23
BSS83P
Infineon
Q1, Q2
MOSFET, P-channel, -12 V, -0.75 A, 0.18
Ω
SOT23
BSH205
NXP
S1, S2
G12AP
Switch, ON-ON Mini Toggle
0.28 x 0.18 inch
G12AP
NKK
U1
IC, Integrated Power LDO
DGS10
TPS51103DRC
TI
2-382811-1
Jumper, 0.1-in, 2 contacts
2-382811-1
Tyco/AMP
14
Using the TPS51103EVM Integrated 3.3-V/5-V Power LDO with Clock Output SLUU303A – JUNE 2008 – Revised SEPTEMBER 2008