Microchip Technology DM164134 Datenbogen
© 2006 Microchip Technology Inc.
DS41159E-page 339
PIC18FXX8
TABLE 27-2:
DC CHARACTERISTICS: EEPROM AND ENHANCED FLASH
DC Characteristics
Standard Operating Conditions
Param
No.
Sym
Characteristic
Min
Typ†
Max
Units
Conditions
Internal Program Memory
Programming Specifications
Programming Specifications
D110
V
PP
Voltage on MCLR/V
PP
pin
9.00
—
13.25
V
D113
I
DDP
Supply Current during
Programming
Programming
—
—
10
mA
Data EEPROM Memory
D120
E
D
Cell Endurance
100K
1M
—
E/W
-40°C to +85°C
D120A
E
D
Byte Endurance
10K
100K
—
E/W
+85°C to +125°C
D121
V
DRW
V
DD
for Read/Write
V
MIN
—
5.5
V
Using EECON to read/write
V
V
MIN
= Minimum operating voltage
D122
T
DEW
Erase/Write Cycle Time
—
4
—
ms
D123
T
RETD
Characteristic Retention
40
—
—
Year
Provided no other specifications
are violated
are violated
D124
T
REF
Number of Total Erase/Write
Cycles to Data EEPROM before
Refresh*
Cycles to Data EEPROM before
Refresh*
1M
10M
—
Cycles -40°C to +85°C
D124A
T
REF
Number of Total Erase/Write
Cycles before Refresh*
Cycles before Refresh*
100K
1M
—
Cycles +85°C to +125°C
Program Flash Memory
D130
E
P
Cell Endurance
10K
100K
—
E/W
-40°C to +85°C
D130A
E
P
Cell Endurance
1000
10K
—
E/W
+85°C to +125°C
D131
V
PR
V
DD
for Read
V
MIN
—
5.5
V
V
MIN
= Minimum operating voltage
D132
V
IE
V
DD
for Block Erase
4.5
—
5.5
V
Using ICSP™ port
D132A
V
IW
V
DD
for Externally Timed Erase
or Write
4.5
—
5.5
V
Using ICSP port
D132B
V
PEW
V
DD
for Self-Timed Write
V
MIN
—
5.5
V
V
MIN
= Minimum operating voltage
D133
T
IE
ICSP Erase Cycle Time
—
4
—
ms
V
DD
≥
4.5V
D133A
T
IW
ICSP Erase or Write Cycle Time
(externally timed)
(externally timed)
1
—
—
ms
V
DD
≥
4.5V
D133A
T
IW
Self-Timed Write Cycle Time
—
2
—
ms
D134
T
RETD
Characteristic Retention
40
—
—
Year
Provided no other specifications
are violated
are violated
† Data in “Typ” column is at 5.0V, 25
°C unless otherwise stated. These parameters are for design guidance
only and are not tested.
*
See Section 5.8 “Using the Data EEPROM” for more information.