Microchip Technology DM164134 数据表

© 2006 Microchip Technology Inc.

DS41159E-page 339

D110

V

PP

Voltage on MCLR/V

PP

 pin

9.00

—

13.25

V

D113

I

DDP

Supply Current during 
Programming

—

—

10

mA

D120

E

D

Cell Endurance

100K

1M

—

E/W

-40°C to +85°C

D120A

E

D

Byte Endurance

10K

100K

—

E/W

+85°C to +125°C

D121

V

DRW

V

DD

 for Read/Write

V

MIN

—

5.5

V

Using EECON to read/write
V

MIN

 = Minimum operating voltage

D122

T

DEW

Erase/Write Cycle Time

—

4

—

ms

D123

T

RETD

Characteristic Retention

40

—

—

Year

Provided no other specifications 
are violated

D124

T

REF

Number of Total Erase/Write 
Cycles to Data EEPROM before 
Refresh*

1M

10M

—

Cycles -40°C to +85°C

D124A

T

REF

Number of Total Erase/Write 
Cycles before Refresh*

100K

1M

—

Cycles +85°C to +125°C

D130

E

P

Cell Endurance

10K

100K

—

E/W

-40°C to +85°C

D130A

E

P

Cell Endurance

1000

10K

—

E/W

+85°C to +125°C

D131

V

PR

V

DD

 for Read

V

MIN

—

5.5

V

V

MIN

 = Minimum operating voltage

D132

V

IE

V

DD

 for Block Erase

4.5

—

5.5

V

Using ICSP™ port

D132A

V

IW

V

DD

 for Externally Timed Erase 

or Write

4.5

—

5.5

V

Using ICSP port

D132B

V

PEW

V

DD

 for Self-Timed Write

V

MIN

—

5.5

V

V

MIN

 = Minimum operating voltage

D133

T

IE

ICSP Erase Cycle Time

—

4

—

ms

V

DD

 

≥

 4.5V

D133A

T

IW

ICSP Erase or Write Cycle Time 
(externally timed)

1

—

—

ms

V

DD

 

≥

 4.5V

D133A

T

IW

Self-Timed Write Cycle Time

—

2

—

ms

D134

T

RETD

Characteristic Retention

40

—

—

Year

Provided no other specifications 
are violated

† Data in “Typ” column is at 5.0V, 25

°C unless otherwise stated. These parameters are for design guidance 

only and are not tested.

*

See Section 5.8 “Using the Data EEPROM” for more information.