Freescale Semiconductor Tower System Module S12G240 TWR-S12G240 TWR-S12G240 Datenbogen

1194

Freescale Semiconductor

Absolute maximum ratings are stress ratings only. A functional operation under or outside those maxima
is not guaranteed. Stress beyond those limits may affect the reliability or cause permanent damage of the
device.

This device contains circuitry protecting against damage due to high static voltage or electrical fields;
however, it is advised that normal precautions be taken to avoid application of any voltages higher than
maximum-rated voltages to this high-impedance circuit. Reliability of operation is enhanced if unused
inputs are tied to an appropriate logic voltage level (e.g., either V

SS35

 or V

DD35

).

All ESD testing is in conformity with CDF-AEC-Q100 stress test qualification for automotive grade
integrated circuits. During the device qualification ESD stresses were performed for the Human Body
Model (HBM) and the Charge Device Model.

A device will be defined as a failure if after exposure to ESD pulses the device no longer meets the device
specification. Complete DC parametric and functional testing is performed per the applicable device
specification at room temperature followed by hot temperature, unless specified otherwise in the device
specification.

1

Beyond absolute maximum ratings device might be damaged.

1

I/O, regulator and analog supply voltage

V

DD35

–0.3

6.0

V

2

Voltage difference V

DDX

 to V

DDA

∆

VDDX

–6.0

0.3

V

3

Voltage difference V

SSX

 to V

SSA

∆

VSSX

–0.3

0.3

V

4

Digital I/O input voltage

V

IN

–0.3

6.0

V

5

Analog reference

V

RH

–0.3

6.0

V

6

EXTAL, XTAL

V

ILV

–0.3

2.16

V

7

Instantaneous maximum current

Single pin limit for all digital I/O pins

2

2

All digital I/O pins are internally clamped to V

SSX

 and V

DDX

, or V

SSA

 and V

DDA

.

I

D

–25

+25

mA

8

Instantaneous maximum current

Single pin limit for EXTAL, XTAL

I

DL

–25

+25

mA

9

Maximum current

Single pin limit for power supply pins

I

DV

–60

+60

mA

10

Storage temperature range (M, V, C, and W temperature range)

Tstg

–65

155

°C