Fairchild Semiconductor N/A 2N6517CTA Datenbogen
Produktcode
2N6517CTA
2N6517 — NPN Epit
axial Silicon T
ransistor
© 2010 Fairchild Semiconductor Corporation
www.fairchildsemi.com
2N6517 Rev. B1
2
Electrical Characteristics
(Continued) T
a
= 25°C unless otherwise noted
* Pulse Test: Pulse Width
≤ 300µs, Duty Cycle ≤ 2%
Symbol
Parameter
Conditions
Min.
Max.
Units
V
CE(sat)
Collector-Emitter Saturation Voltage
I
C
= 10mA, I
B
= 1mA
I
C
= 20mA, I
B
= 2mA
I
C
= 30mA, I
B
= 3mA
I
C
= 50mA, I
B
= 5mA
0.3
0.35
0.5
1
V
V
V
V
V
V
V
V
BE(sat)
Base-Emitter Saturation Voltage
I
C
= 10mA, I
B
= 1mA
I
C
= 20mA, I
B
= 2mA
I
C
= 30mA, I
B
= 3mA
0.75
0.85
0.85
0.9
V
V
V
V
V
C
ob
Output Capatitance
V
CB
= 20V, I
E
= 0, f = 1MHz
6
pF
f
T
Current Gain Bandwidth Product *
I
C
= 10mA, V
CE
= 20V, f = 20MHz
40
200
MHz
V
BE(on)
Base-Emitter On Voltage
I
C
= 100mA, V
CE
= 10V
2
V