Fairchild Semiconductor N/A 2N6517CTA Datenbogen
Produktcode
2N6517CTA
2N6517 — NPN Epit
axial Silicon T
ransistor
© 2010 Fairchild Semiconductor Corporation
www.fairchildsemi.com
2N6517 Rev. B1
3
Typical Performance Characteristics
Figure 1. DC Current Gain
Figure 2. Saturation Voltage
Figure 3. Saturation Voltage
Figure 4. Emitter Cut Off Current
Figure 5. Collector CutOff Current
Figure 6. Base-Emitter On Voltage
1
10
100
1000
0.1
1
10
100
1000
V
CE
= 10V
Ta = 25
o
C
Ta = 75
o
C
Ta = 125
o
C
h
FE
, DC CU
RR
EN
T GA
IN
I
C
[mA], COLLECTOR CURRENT
1
10
100
1000
0.01
0.1
1
10
100
Ta = 25
o
C
Ta = 75
o
C
I
C
= 10 I
B
Ta = 125
o
C
V
CE
(sa
t) [V
], SA
TUR
A
TIO
N
V
O
LTA
GE
I
C
[mA], COLLECTOR CURRENT
1
10
100
1000
0.1
1
Ta = 125
o
C
Ta = 75
o
C
Ta = 25
o
C
I
C
= 10 I
B
V
BE
(s
at)
[V],
SATUR
A
TIO
N
VOLT
AGE
I
C
[mA], COLLECTOR CURRENT
1
2
3
4
5
6
1E-3
0.01
0.1
1
10
100
Ta = 125
o
C
Ta = 75
o
C
Ta = 25
o
C
I
EB
O
[
n
A],
E
m
it
te
r C
u
t O
ff
Cu
rre
n
t
V
EB
[V], EMITTER-BASE VOLTAGE
50
100
150
200
250
300
350
0.1
1
10
100
1000
10000
Ta = 125
o
C
Ta = 75
o
C
Ta = 25
o
C
I
CBO
[
n
A
], Co
llec
to
r Cu
tO
ff Cu
rre
n
t
V
CB
[V], COLLECTOR-BASE VOLTAGE
1
10
100
1000
0.4
0.6
0.8
1.0
1.2
1.4
1.6
V
CE
= 10V
Ta = 25
o
C
V
BE
(o
n)
[
V
],
BA
SE
-E
MIT
T
E
R
ON
VO
L
T
A
G
E
I
C
[mA], COLLECTOR CURRENT