Fairchild Semiconductor N/A D44H8 Datenbogen
Produktcode
D44H8
D44H8 / NZT44H8
/
D44H1
1
— NPN Power
Amplifier
© 2010 Fairchild Semiconductor Corporation
www.fairchildsemi.com
D44H8 / NZT44H8 / D44H11 Rev. B2
2
Electrical Characteristics
T
A
=25
°C unless otherwise noted
Symbol
Parameter
Test Condition
Min.
Max.
Units
Off Characteristics
V
(BR)CEO
Collector-Emitter Breakdown
Voltage
Voltage
D44H8 / NZT44H8
D44H11
I
C
= 100mA, I
B
= 0
60
80
80
V
I
CBO
Collector-Cutoff Current
D44H8 / NZT44H8
D44H11
V
CB
= 60V, I
E
= 0
V
CB
= 80V, I
E
= 0
10
μA
I
EBO
Emitter-Cutoff Current
V
EB
= 5V, I
C
= 0
100
μA
On Characteristics
h
FE
DC Current Gain
V
CE
= 1V, I
C
= 2A
V
CE
= 1V, I
C
= 4A
60
40
40
V
CE(sat)
Collector-Emitter Saturation Voltage
I
C
= 8A, I
B
= 0.4A
1.0
V
V
BE(sat)
Base-Emitter Saturation Voltage
I
C
= 8A, I
B
= 0.8A
1.5
V
V
BE(on)
Base-Emitter On Voltage
V
CE
= 2V, I
C
= 10mA
0.52
0.65
V
Small Signal Characteristics
f
T
Current Gain-Bandwidth Product
I
C
= 500mA, V
CE
= 10V
50
MHz