Fairchild Semiconductor N/A BD237STU Datenbogen
Produktcode
BD237STU
©2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001
BD233/
235/
237
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
C
=25
°
C unless otherwise noted
Electrical Characteristics
T
C
=25
°
C unless otherwise noted
* Pulse Test: PW=300
µ
s, duty Cycle=1.5% Pulsed
Symbol
Parameter
Value
Units
V
CBO
Collector-Base Voltage
: BD233
: BD235
: BD237
: BD237
45
60
60
100
V
V
V
V
V
V
CEO
Collector-Emitter Voltage
: BD233
: BD235
: BD237
: BD237
45
60
80
60
80
V
V
V
V
V
V
CER
Collector-Emitter Voltage
: BD233
: BD235
: BD237
: BD237
45
60
100
V
V
V
V
V
V
EBO
Emitter-Base Voltage
5
V
I
C
Collector Current (DC)
2
A
I
CP
*Collector Current (Pulse)
6
A
P
C
Collector Dissipation (T
C
=25
°
C)
25
W
T
J
Junction Temperature
150
°
C
T
STG
Storage Temperature
- 65 ~ 150
°
C
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Units
V
CEO
(sus)
* Collector-Emitter Sustaining Voltage
: BD233
: BD235
: BD237
: BD235
: BD237
I
C
= 100mA, I
B
= 0
45
60
80
60
80
V
V
V
V
V
I
CBO
Collector Cut-off Current
: BD233
: BD235
: BD237
: BD235
: BD237
V
CB
= 45V, I
E
= 0
V
CB
= 60V, I
E
= 0
V
CB
= 100V, I
E
= 0
100
100
100
100
100
µ
A
µ
A
µ
A
I
EBO
Emitter Cut-off Current
V
EB
= 5V, I
C
= 0
1
mA
h
FE
* DC Current Gain
V
CE
= 2V, I
C
= 150mA
V
CE
= 2V, I
C
= 1A
40
25
25
V
CE
(sat)
* Collector-Emitter Saturation Voltage
I
C
= 1A, I
B
= 0.1A
0.6
V
V
BE
(on)
* Base-Emitter ON Voltage
V
CE
= 2V, I
C
= 1A
1.3
V
f
T
Current Gain Bandwidth Product
V
CE
= 10V, I
C
= 250mA
3
MHz
BD233/235/237
Medium Power Linear and Switching
Applications
Applications
• Complement to BD 234/236/238 respectively
1
TO-126
1. Emitter 2.Collector 3.Base