Fairchild Semiconductor N/A BD237STU Data Sheet

Fairchild Semiconductor

Product codes

BD237STU

©2001 Fairchild Semiconductor Corporation

Rev. A1, June 2001

BD233/

235/

237

NPN Epitaxial Silicon Transistor

Absolute Maximum Ratings

T

C

=25

°

C unless otherwise noted

Electrical Characteristics

T

C

=25

°

C unless otherwise noted

* Pulse Test: PW=300

µ

s, duty Cycle=1.5% Pulsed

Symbol

Parameter

Value

Units

V

CBO

Collector-Base Voltage

: BD233

: BD235
: BD237

45
60

100

V
V
V

V

CEO

Collector-Emitter Voltage

: BD233

: BD235
: BD237

45
60
80

V
V
V

V

CER

Collector-Emitter Voltage

: BD233

: BD235
: BD237

45

60

100

V
V
V

V

EBO

Emitter-Base Voltage

5

V

I

C

Collector Current (DC)

2

A

I

CP

*Collector Current (Pulse)

6

A

P

C

Collector Dissipation (T

C

=25

°

C)

25

W

T

J

Junction Temperature

150

°

C

T

STG

Storage Temperature

- 65 ~ 150

°

C

Symbol

Parameter

Test Condition

Min.

Typ.

Max.

Units

V

CEO

(sus)

* Collector-Emitter Sustaining Voltage

: BD233
: BD235
: BD237

I

C

= 100mA, I

B

= 0

45
60
80

V
V
V

I

CBO

Collector Cut-off Current

: BD233
: BD235
: BD237

V

CB

= 45V, I

E

= 0

V

CB

= 60V, I

E

= 0

V

CB

= 100V, I

E

= 0

100
100
100

µ

A

µ

A

µ

A

I

EBO

Emitter Cut-off Current

V

EB

= 5V, I

C

= 0

1

mA

h

FE

* DC Current Gain

V

CE

= 2V, I

C

= 150mA

V

CE

= 2V, I

C

= 1A

40
25

V

CE

(sat)

* Collector-Emitter Saturation Voltage

I

C

= 1A, I

B

= 0.1A

0.6

V

V

BE

(on)

* Base-Emitter ON Voltage

V

CE

= 2V, I

C

= 1A

1.3

V

f

T

Current Gain Bandwidth Product

V

CE

= 10V, I

C

= 250mA

3

MHz

BD233/235/237

Medium Power Linear and Switching
Applications

• Complement to BD 234/236/238 respectively

1

TO-126

1. Emitter 2.Collector 3.Base