Fairchild Semiconductor N/A MJD122TF Datenbogen

© 2009 Fairchild Semiconductor Corporation

  www.fairchildsemi.com

MJD122 Rev. B0

1 

December 2009

• D-PAK for Surface Mount Applications
• High DC Current Gain
• Built-in a Damper Diode at E-C
• Lead Formed for Surface Mount Applications 
• Electrically Similar to Popular TIP122
• Complement to MJD127

T

A

=25

°C unless otherwise noted

  T

A

=25

°C unless otherwise noted

* Pulse Test: PW

≤300μs, Duty Cycle≤2%

 V

CBO

 Collector-Base Voltage

100

V

 V

CEO

 Collector-Emitter Voltage

100

V

 V

EBO

 Emitter-Base Voltage

  5

V

 I

C

 Collector Current (DC)

  8

A

 I

CP

 Collector Current (Pulse)

  16 

A

 I

B

 Base Current

 120

mA

 P

C

 Collector Dissipation (T

C

=25

°C)

  20

W

 Collector Dissipation (T

A

=25

°C)

1.75

W

 T

J

 Junction Temperature

150

°C

 T

STG

 Storage Temperature

- 65 to 150

°C

 V

CEO

(sus)

*Collector-Emitter Sustaining Voltage

 I

C 

= 30mA, I

B 

= 0

100

V

 I

CEO

 Collector Cut-off Current

 V

CE 

= 50V, I

B 

=0

10

μA

 I

CBO

 Collector Cut-off Current

 V

CB 

= 100V, I

E 

= 0

10

μA

 I

EBO

 Emitter Cut-off Current

 V

EB 

= 5V, I

C 

= 0

 2

mA

 h

FE

*DC Current Gain

 V

CE 

= 4V, I

C 

= 4A

 V

CE 

= 4V, V

EB 

= 8A

1000

 100

12K

 V

CE

(sat)

*Collector-Emitter Saturation Voltage

 I

C 

= 4A, I

B 

= 16mA

 I

C 

= 8A, I

B 

= 80mA

  2
  4

V
V

 V

BE

(sat)

*Base-Emitter Saturation Voltage

 I

C 

= 8A, I

B 

= 80mA

4.5

V

 V

BE

(on)

*Base-Emitter On Voltage

 V

CE 

= 4V, I

C 

= 4A

2.8

V

 

C

ob

 

 Output Capacitance

 V

CB 

= 10V, I

E 

= 0

 f= 0.1MHz

200

pF

1.Base    2.Collector    3.Emitter

D-PAK

1

Equivalent Circuit

B

E

C

R1

R2

R1

8k

Ω

≅

R2

0.12k

Ω

≅