Fairchild Semiconductor N/A MJD122TF 데이터 시트
제품 코드
MJD122TF
MJD122
— NPN Silicon Da
rlington T
ransistor
© 2009 Fairchild Semiconductor Corporation
www.fairchildsemi.com
MJD122 Rev. B0
1
December 2009
MJD122
NPN Silicon Darlington Transistor
NPN Silicon Darlington Transistor
Features
• D-PAK for Surface Mount Applications
• High DC Current Gain
• Built-in a Damper Diode at E-C
• Lead Formed for Surface Mount Applications
• Electrically Similar to Popular TIP122
• Complement to MJD127
• High DC Current Gain
• Built-in a Damper Diode at E-C
• Lead Formed for Surface Mount Applications
• Electrically Similar to Popular TIP122
• Complement to MJD127
Absolute Maximum Ratings
T
A
=25
°C unless otherwise noted
Electrical Characteristics
T
A
=25
°C unless otherwise noted
* Pulse Test: PW
≤300μs, Duty Cycle≤2%
Symbol
Parameter
Value
Units
V
CBO
Collector-Base Voltage
100
V
V
CEO
Collector-Emitter Voltage
100
V
V
EBO
Emitter-Base Voltage
5
V
I
C
Collector Current (DC)
8
A
I
CP
Collector Current (Pulse)
16
A
I
B
Base Current
120
mA
P
C
Collector Dissipation (T
C
=25
°C)
20
W
Collector Dissipation (T
A
=25
°C)
1.75
W
T
J
Junction Temperature
150
°C
T
STG
Storage Temperature
- 65 to 150
°C
Symbol
Parameter
Test Condition
Min.
Max.
Units
V
CEO
(sus)
*Collector-Emitter Sustaining Voltage
I
C
= 30mA, I
B
= 0
100
V
I
CEO
Collector Cut-off Current
V
CE
= 50V, I
B
=0
10
μA
I
CBO
Collector Cut-off Current
V
CB
= 100V, I
E
= 0
10
μA
I
EBO
Emitter Cut-off Current
V
EB
= 5V, I
C
= 0
2
mA
h
FE
*DC Current Gain
V
CE
= 4V, I
C
= 4A
V
CE
= 4V, V
EB
= 8A
1000
100
12K
V
CE
(sat)
*Collector-Emitter Saturation Voltage
I
C
= 4A, I
B
= 16mA
I
C
= 8A, I
B
= 80mA
2
4
4
V
V
V
V
BE
(sat)
*Base-Emitter Saturation Voltage
I
C
= 8A, I
B
= 80mA
4.5
V
V
BE
(on)
*Base-Emitter On Voltage
V
CE
= 4V, I
C
= 4A
2.8
V
C
ob
Output Capacitance
V
CB
= 10V, I
E
= 0
f= 0.1MHz
200
pF
1.Base 2.Collector 3.Emitter
D-PAK
1
Equivalent Circuit
B
E
C
R1
R2
R1
8k
Ω
≅
R2
0.12k
Ω
≅