Texas Instruments SM320F2812-HT Benutzerhandbuch
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SGUS062A – JUNE 2009 – REVISED APRIL 2010
6.31 Flash Timing
6.31.1 Recommended Operating Conditions
(4)
MIN
NOM
MAX
UNIT
N
f
Flash endurance for the array (Write/erase cycles)
0°C to 85°C
100
1000
cycles
Maximum One-Time Programmable (OTP) endurance for the array (Write
N
OTP
0°C to 85°C
1
write
cycles)
(4)
Flash Timing Endurance is the minimum number of write/erase or write cycles specified over a programming temperature range of 0°C
to 85°C. Flash may be read over the operating temperature range of the device.
to 85°C. Flash may be read over the operating temperature range of the device.
Table 6-62. Flash Parameters at 150-MHz SYSCLKOUT
(1) (2)
PARAMETER
MIN
TYP
MAX
UNIT
16-Bit Word
35
m
s
Program
8K Sector
170
ms
Time
16K Sector
320
ms
8K Sector
10
s
Erase Time
16K Sector
11
s
Erase
75
mA
I
DD3VFLP
V
DD3VFL
current consumption during the Erase/Program cycle
Program
35
mA
I
DDP
V
DD
current consumption during Erase/Program cycle
140
mA
I
DDIOP
V
DDIO
current consumption during Erase/Program cycle
20
mA
(1)
Typical parameters as seen at room temperature using flash API V1 including function call overhead.
(2)
Not production tested.
Table 6-63. Flash/OTP Access Timing
(1) (2)
PARAMETER
MIN
TYP
MAX
UNIT
t
a(fp)
Paged Flash access time
36
ns
t
a(fr)
Random Flash access time
36
ns
t
a(OTP)
OTP access time
60
ns
(1)
For 150 MHz, PAGE WS = 5 and RANDOM WS = 5
For 135 MHz, PAGE WS = 4 and RANDOM WS = 4
For 135 MHz, PAGE WS = 4 and RANDOM WS = 4
(2)
Not production tested.
Table 6-64. Minimum Required Wait-States at Different Frequencies
(1)
SYSCLKOUT (MHz)
SYSCLKOUT (ns)
PAGE WAIT-STATE
(2)
RANDOM WAIT STATE
(2) (3)
150
6.67
5
5
120
8.33
4
4
100
10
3
3
75
13.33
2
2
50
20
1
1
30
33.33
1
1
25
40
0
1
15
66.67
0
1
(1)
Not production tested.
(2)
Formulas to compute page wait state and random wait state:
(3)
Random wait state must be greater than or equal to 1
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Electrical Specifications
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