Fujitsu FR81S User Manual
CHAPTER 46: WORKFLASH MEMORY
5. Operation
FUJITSU SEMICONDUCTOR LIMITED
CHAPTER : WORKFLASH MEMORY
FUJITSU SEMICONDUCTOR CONFIDENTIAL
19
5.3.1. Command Sequence
The command sequence is shown below.
The automatic algorithm starts when half-word (16-bit) data is written to the flash memory once to six times
in a row. This is called a command. The command sequences are shown below.
Table 5-1 Command Sequence
Command
Number
of
writing
1st time
2nd time
3rd time
4th time
5th time
6th time
Address
Dat
a
Address
Data
Address
Data
Address
Data
Address
Data
Address
Data
Reset
1
arbitrary
F0
H
Read
1
RA
R
D
Write
4
AA8
H
A
A
H
554
H
55
H
AA8
H
A0
H
PA
PD
Chip erase
6
AA8
H
A
A
H
554
H
55
H
AA8
H
80
H
AA8
H
AA
H
554
H
55
H
AA8
H
10
H
Sector erase
6
AA8
H
A
A
H
554
H
55
H
AA8
H
80
H
AA8
H
AA
H
554
H
55
H
SA
30
H
Sector erase
suspend
1
arbitrary B0
H
Sector erase
resume
1
arbitrary 30
H
* The data written in the table only shows the lower 8-bit. The upper 8-bit can be any value. The commands
must be written as bytes or half-words.
* The addresses written in the table only show the lower 12-bit. Set the upper 20-bit to any address within
the address range of the target flash macro.
PA: Write address (half-word alignment)
PD: Write data (Write as 16-bit.)
SA: Sector address (specify an arbitrary address within the address range of the sector to erase.)
RA: Read address
RD: Read data (the read width is arbitrary.)
MB91520 Series
MN705-00010-1v0-E
1990