Motorola 700/800-Series User Manual

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Board Level Hardware Description
1
DRAM performance is specified in the section on the DRAM 
Memory Controller in the MC2chip Programming Model in the 
MVME162LX Embedded Controller ProgrammerÕs Reference Guide.
The DRAM map decoder may be programmed to accommodate 
different base address(es) and sizes of mezzanine boards. The 
onboard DRAM is disabled by a local bus reset and must be 
programmed before the DRAM may be accessed. Refer to the 
MC2chip and MCECC descriptions in the MVME162LX Embedded 
Controller ProgrammerÕs Reference Guide
 for detailed programming 
information.
Most DRAM devices require some number of access cycles before 
the DRAMs are fully operational. Normally this requirement is met 
by the onboard refresh circuitry and normal DRAM initialization. 
However, software should insure a minimum of 10 initialization 
cycles are performed to each bank of RAM.
SRAM Options
The MVME162LX provides 128KB of 32-bit-wide onboard static 
RAM in a single non-interleaved architecture with onboard battery 
backup. The SRAM arrays are not parity protected.
The SRAM battery backup function is provided by a Dallas 
DS1210S device. The DS1210S supports primary and secondary 
power sources. When the main board power fails, the DS1210S 
selects the source with the higher voltage. If one source should fail, 
the DS1210S switches to the redundant source. Each time the board 
is powered up, the DS1210S checks power sources and if the voltage 
of the backup source is less than two volts, the second memory 
cycle is blocked. This allows software to provide an early warning 
to avoid data loss. Because the DS1210S may block the second 
access, software should do at least two accesses before relying on 
the data.
The MVME162LX provides jumpers (on J14) that allow either 
power source of the DS1210S to be connected to the VMEbus +5V 
STDBY pin or to one cell of the onboard battery. For example, the 
primary system backup source may be a battery connected to the