Kingston Technology KHX6400D2B1/1G Leaflet
Memory Module Specification
Document No. 4805597-001.A00
05/21/10
KHX6400D2B1/1G
1GB 128M x 64-Bit PC2-6400
CL5 240-Pin DIMM
Page 1
DESCRIPTION:
This document describes Kingston's 128M x 64-bit 1GB (1024MB) DDR2-800 CL5 SDRAM
(Synchronous DRAM) memory module, based on eight 128M x 8-bit DDR2 FBGA components. The
SPD is programmed to JEDEC standard latency 800MHz timing of 5-5-5-15 at 1.8V. This 240-pin
DIMM uses gold contact fingers and requires +1.8V. The electrical and mechanical specifications
are as follows:
(Synchronous DRAM) memory module, based on eight 128M x 8-bit DDR2 FBGA components. The
SPD is programmed to JEDEC standard latency 800MHz timing of 5-5-5-15 at 1.8V. This 240-pin
DIMM uses gold contact fingers and requires +1.8V. The electrical and mechanical specifications
are as follows:
FEATURES:
Power supply : Vdd: 1.8V ± 0.1V, Vddq: 1.8V ± 0.1V
Double-data-rate architecture; two data transfers per clock cycle
Bidirectional data strobe(DQS)
Differential clock inputs(CK and CK)
DLL aligns DQ and DQS transition with CK transition
Programmable Read latency 5 (clock)
Burst Length: 4, 8 (Interleave/nibble sequential)
Programmable Burst type (sequential & interleave)
Timing Reference: 800MHz 5-5-5-15 at +1.8V
Edge aligned data output, center aligned data input
Auto & Self refresh, 7.8us refresh interval (8K/64ms refresh)
Serial presence detect with EEPROM
High Performance Heat Spreader
Double-data-rate architecture; two data transfers per clock cycle
Bidirectional data strobe(DQS)
Differential clock inputs(CK and CK)
DLL aligns DQ and DQS transition with CK transition
Programmable Read latency 5 (clock)
Burst Length: 4, 8 (Interleave/nibble sequential)
Programmable Burst type (sequential & interleave)
Timing Reference: 800MHz 5-5-5-15 at +1.8V
Edge aligned data output, center aligned data input
Auto & Self refresh, 7.8us refresh interval (8K/64ms refresh)
Serial presence detect with EEPROM
High Performance Heat Spreader
PCB : Height 1.180” (30.00mm), single sided component
PERFORMANCE:
Clock Cycle Time (tCK) CL=5
2.5ns (min.) / 8ns (max.)
Row Cycle Time (tRC)
57.5ns (min.)
Refresh to Active/Refresh Command Time (tRFC)
127.5ns
Row Active Time (tRAS)
45ns (min.) / 70,000ns (max.)
Single Power Supply of
+1.8V (+/- .1V)
Power
1.040 W (operating)
UL Rating
94 V - 0
Operating Temperature
0
o
C to 55
o
C
Storage Temperature
-55
o
C to +125
o
C
T E C H N O L O G Y