Intel G870 CM8062307260115 User Manual

54

Datasheet, Volume 1

SA_BS[2:0]

Bank Select: These signals define which banks are 

selected within each SDRAM rank.

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DDR3

SA_CAS#

CAS Control Signal: This signal is used with SA_RAS# and 

SA_WE# (along with SA_CS#) to define the SDRAM 

Commands.

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DDR3

SA_CK#[1:0]

SDRAM Inverted Differential Clock: Channel A SDRAM 

Differential clock signal-pair complement.

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DDR3

SA_CK#[3:2]

SDRAM Inverted Differential Clock: Channel A SDRAM 

Differential clock signal-pair complement.

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DDR3

SA_CK[1:0]

SDRAM Differential Clock: Channel A SDRAM Differential 

clock signal pair.
The crossing of the positive edge of SA_CKx and the 

negative edge of its complement SA_CKx# are used to 

sample the command and control signals on the SDRAM.

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DDR3

SA_CK[3:2]

SDRAM Differential Clock: Channel A SDRAM Differential 

clock signal pair.
The crossing of the positive edge of SA_CKx and the 

negative edge of its complement SA_CKx# are used to 

sample the command and control signals on the SDRAM.

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DDR3

SA_CKE[3:0]

Clock Enable: (1 per rank). These signals are used to:

• Initialize the SDRAMs during power-up
• Power-down SDRAM ranks
• Place all SDRAM ranks into and out of self-refresh 

during STR

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DDR3

SA_CS#[3:0]

Chip Select: (1 per rank) These signals are used to select 

particular SDRAM components during the active state. 

There is one Chip Select for each SDRAM rank.

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SA_DM[7:0]

Data Mask: These signals are used to mask individual 

bytes of data in the case of a partial write, and to 

interrupt burst writes.
When activated during writes, the corresponding data 

groups in the SDRAM are masked. There is one 

SA_DM[7:0] for every data byte lane.

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DDR3

SA_DQ[63:0]

Data Bus: Channel A data signal interface to the SDRAM 

data bus.

I/O

DDR3

SA_DQS[8:0]

SA_DQS#[8:0]

Data Strobes: SA_DQS[8:0] and its complement signal 

group make up a differential strobe pair. The data is 

captured at the crossing point of SA_DQS[8:0] and its 

SA_DQS#[8:0] during read and write transactions.

I/O

DDR3

SA_ECC_CB[7:0]

Data Lines for ECC Check Byte. 

I/O

DDR3

SA_MA[15:0]

Memory Address: These signals are used to provide the 

multiplexed row and column address to the SDRAM.

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DDR3

SA_ODT[3:0]

On Die Termination: Active Termination Control

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DDR3

SA_RAS#

RAS Control Signal: This signal is used with SA_CAS# and 

SA_WE# (along with SA_CS#) to define the SRAM 

Commands.

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DDR3

SA_WE#

Write Enable Control Signal: This signal is used with 

SA_RAS# and SA_CAS# (along with SA_CS#) to define 

the SDRAM Commands.

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DDR3