Intel Celeron 360 HH80552RE099512 User Manual

Product codes
HH80552RE099512
Page of 95
Datasheet
25
Electrical Specifications
2.6.2
GTL+ Asynchronous Signals
Legacy input signals such as A20M#, IGNNE#, INIT#, SMI#, and STPCLK# use CMOS 
input buffers. All of these signals follow the same DC requirements as GTL+ signals; 
however, the outputs are not actively driven high (during a logical 0 to 1 transition) by 
the processor. These signals do not have setup or hold time specifications in relation to 
BCLK[1:0]. 
All of the GTL+ Asynchronous signals are required to be asserted/de-asserted for at 
least six BCLKs in order for the processor to recognize the proper signal state. See 
 for the DC specifications for the GTL+ Asynchronous signal groups. See 
 for additional timing requirements for entering and leaving the low power 
states.
2.6.3
Processor DC Specifications
The processor DC specifications in this section are defined at the processor core (pads) 
unless otherwise stated. All specifications apply to all frequencies and cache sizes 
unless otherwise stated. 
Table 10.
GTL+ Signal Group DC Specifications
Symbol
Parameter
Min
Max
Unit
Notes
1
NOTES:
1. Unless otherwise noted, all specifications in this table apply to all processor frequencies.
V
IL
Input Low Voltage
0.0
GTLREF – (0.10 * V
TT
)
V
2, 3
2. V
IL
 is defined as the voltage range at a receiving agent that will be interpreted as a logical low value.
3. The V
TT
 referred to in these specifications is the instantaneous V
TT
.
V
IH
Input High Voltage
GTLREF + (0.10 * V
TT
)
V
TT
V
4, 5, 
3
4. V
IH
 is defined as the voltage range at a receiving agent that will be interpreted as a logical high value.
5. V
IH
 and V
OH
 may experience excursions above V
TT
. However, input signal drivers must comply with the
signal quality specifications.
V
OH
Output High Voltage
0.90*V
TT
V
TT
V
3
5
I
OL
Output Low Current
N/A
V
TT_MAX
/
[(0.50*R
TT_MIN
)+(R
ON_MIN
)]
A
-
I
LI
Input Leakage 
Current
N/A
± 200
µA
6
6. Leakage to V
SS
 with land held at V
TT
.
I
LO
Output Leakage 
Current
N/A
± 200
µA
7
7. Leakage to V
TT
 with land held at 300 mV.
R
ON
Buffer On Resistance
6
12
Ω