Microchip Technology 25AA02E48T-I/OT Memory IC SOT-23-6 2 K 256 x 8 25AA02E48T-I/OT Data Sheet
Product codes
25AA02E48T-I/OT
25AA02E48/25AA02E64
DS20002123D-page 2
2008-2013 Microchip Technology Inc.
1.0
ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings
(†)
V
CC
.............................................................................................................................................................................6.5V
All inputs and outputs w.r.t. V
SS
......................................................................................................... -0.6V to V
CC
+1.0V
Storage temperature .................................................................................................................................-65°C to 150°C
Ambient temperature under bias .................................................................................................................-40°C to 85°C
ESD protection on all pins ..........................................................................................................................................4 kV
Ambient temperature under bias .................................................................................................................-40°C to 85°C
ESD protection on all pins ..........................................................................................................................................4 kV
TABLE 1-1:
DC CHARACTERISTICS
† NOTICE: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the
device. This is a stress rating only and functional operation of the device at those or any other conditions above those
indicated in the operational listings of this specification is not implied. Exposure to maximum rating conditions for an
extended period of time may affect device reliability.
device. This is a stress rating only and functional operation of the device at those or any other conditions above those
indicated in the operational listings of this specification is not implied. Exposure to maximum rating conditions for an
extended period of time may affect device reliability.
DC CHARACTERISTICS
Industrial (I):
T
A
= -40°C to +85°C
V
CC
= 1.8V to 5.5V
Param.
No.
Sym.
Characteristic
Min.
Max.
Units
Test Conditions
D001
V
IH1
High-level Input
voltage
voltage
0.7 V
CC
V
CC
+1
V
D002
V
IL1
Low-level Input
Voltage
Voltage
-0.3
0.3 V
CC
V
V
CC
2.7V (
Note 1
)
D003
V
IL2
-0.3
0.2 V
CC
V
V
CC
< 2.7V (
Note 1
)
D004
V
OL
Low-level Output
Voltage
Voltage
—
0.4
V
I
OL
= 2.1 mA
D005
V
OL
—
0.2
V
I
OL
= 1.0 mA, V
CC
< 2.5V
D006
V
OH
High-level Output
Voltage
Voltage
V
CC
-0.5
—
V
I
OH
= -400
A
D007
I
LI
Input Leakage
Current
Current
—
±1
A
CS = V
CC
, V
IN
= V
SS
or V
CC
D008
I
LO
Output Leakage
Current
Current
—
±1
A
CS = V
CC
, V
OUT
= V
SS
or V
CC
D009
C
INT
Internal Capacitance
(all inputs and
outputs)
(all inputs and
outputs)
—
7
pF
T
A
= 25°C, CLK = 1.0 MHz,
V
CC
= 5.0V (
Note 1
)
D010
I
CC
Read
Operating Current
—
—
5
2.5
mA
mA
V
CC
= 5.5V; F
CLK
= 10.0 MHz;
SO = Open
V
V
CC
= 2.5V; F
CLK
= 5.0 MHz;
SO = Open
D011
I
CC
Write
—
—
—
5
3
3
mA
mA
mA
V
CC
= 5.5V
V
CC
= 2.5V
D012
I
CCS
Standby Current
—
1
A
CS = V
CC
= 2.5V, Inputs tied to V
CC
or
V
SS
, T
A
= +85°C
Note:
This parameter is periodically sampled and not 100% tested.