Texas Instruments Single Cell Battery Fuel Gauge Evaluation Module BQ27210EVM BQ27210EVM Data Sheet
Product codes
BQ27210EVM
www.ti.com
Compensated State-of-Charge (CSOC) — Address 0x2C
Reserved Registers
EEPROM Enable Register (EE_EN) — Address 0x6E
EEPROM Data Registers (EE_DATA) — Address 0x76 — 0x7F
Initial Last Measured Discharge High Byte (ILMD) — Address 0x76
Scaled EDVF Threshold (SEDVF) — Address 0x77
SLUS707B – APRIL 2006 – REVISED JANUARY 2007
CSOC reports the compensated available capacity as a percentage of the last measured discharge value (LMD).
The equation is:
The equation is:
CSOC (%) = 100 * CAC / LMD
The host system has read-only access to this register.
Addresses 0x1E, 0x1F, 0x22-0x25, 0x2D-0x6D and 0x6F-0x75 are reserved and cannot be written by the host.
This register is used to enable host writes to EEPROM data locations (addresses 0x76 — 0x7F). The host must
write data 0xDD to this register to enable EEPROM programming. See the Programming the EEPROM section
for further information on programming the EEPROM bytes. Care should be taken to insure that no value except
0xDD is written to this location. All bqJUNIOR measurements and computations will be inhibited until 0x00 is
written back to address 0x6E.
write data 0xDD to this register to enable EEPROM programming. See the Programming the EEPROM section
for further information on programming the EEPROM bytes. Care should be taken to insure that no value except
0xDD is written to this location. All bqJUNIOR measurements and computations will be inhibited until 0x00 is
written back to address 0x6E.
The EEPROM data registers contain information vital to the performance of the device. These registers are to be
programmed during pack manufacturing to allow flexibility in the design values of the battery to be monitored.
The EEPROM data registers are listed in
programmed during pack manufacturing to allow flexibility in the design values of the battery to be monitored.
The EEPROM data registers are listed in
. Detailed descriptions of what should be programmed follow.
See the Programming the EEPROM section for detailed information on writing the values to EEPROM.
Table 2. bq27010/bq27210 EEPROM Memory Map
Address
Name
Function
0x7F
TCOMP
Temperature compensation constants, OR, ID#1
0x7E
DCOMP
Discharge rate compensation constants, OR, ID#2
0x7D
GAF/DEDV
Gain Age Factor / EDVI rate compensation
0x7C
PKCFG
Pack configuration values
0x7B
TAPER
Aging estimate enable [7], charge termination taper current [6:0]
0x7A
DMFSD
Digital magnitude filter and self-discharge rate constants
0x79
ISLC/EDVT
Initial standby load current / EDVI temperature compensation
0x78
SEDV1
Scaled EDV1 threshold
0x77
SEDVF
Scaled EDVF threshold
0x76
ILMD
Initial last measured discharge high byte
This register contains the scaled design capacity of the battery to be monitored. ILMD is programmed in units of
914
914
µ
Vh per bit. The equation to calculate the initial LMD is:
ILMD = Design Capacity (mAh) * R
S
(m
Ω
) / (256 * 3.57)
where R
S
is the value of the sense resistor used in the system. This value is used to initialize the high byte of
LMD on a full reset. The low byte of LMD is initialized to 0.
This register contains the scaled value of the threshold for zero battery capacity. To calculate the value to
program, use the following equation:
program, use the following equation:
SEDVF = Design EDVF (mV) / 8 – 256
18