Microchip Technology DV164136 Data Sheet

© 2008 Microchip Technology Inc.

DS39646C-page 393

Standard Operating Conditions (unless otherwise stated)
Operating temperature -40°C 

≤ T

A

 

≤ +85°C for industrial 

D120

E

D

Byte Endurance

100K

1M

—

E/W

-40

°C to +85°C

D121

V

DRW

V

DD

 for Read/Write

V

MIN

—

5.5

V

Using EECON to read/write
V

MIN

 = Minimum operating 

voltage

D122

T

DEW

Erase/Write Cycle Time

—

4

—

ms

D123

T

RETD

Characteristic Retention

40

—

—

Year Provided no other 

specifications are violated

D124

T

REF

Number of Total Erase/Write 
Cycles before Refresh

1M

10M

—

E/W

-40°C to +85°C 

D125

I

DDP

Supply Current during 
Programming

—

10

—

mA

D130

E

P

Cell Endurance

10K

100K

—

E/W

-40

°C to +85°C

D131

V

PR

V

DD

 for Read

V

MIN

—

5.5

V

V

MIN

 = Minimum operating 

voltage

D132B V

PEW

V

DD

 for Self-Timed Write and 

Row Erase

V

MIN

—

5.5

V

V

MIN

 = Minimum operating 

voltage

D133A T

IW

Self-Timed Write Cycle Time

—

2

—

ms

D134

T

RETD

Characteristic Retention

40

100

—

Year Provided no other 

specifications are violated

D135

I

DDP

Supply Current during 
Programming

—

10

—

mA

† Data in “Typ” column is at 5.0V, 25°C unless otherwise stated. These parameters are for design guidance 

only and are not tested.

Refer to Section 8.8 “Using the Data EEPROM” for a more detailed discussion on data EEPROM 
endurance.