Microchip Technology DV164136 Data Sheet

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PIC18F87J11 FAMILY
DS39778E-page 414
 
 2007-2012 Microchip Technology Inc.
TABLE 28-1:
MEMORY PROGRAMMING REQUIREMENTS    
 
     
DC CHARACTERISTICS
Standard Operating Conditions (unless otherwise stated)
Operating temperature -40°C 
 T
A
 
 +85°C for industrial 
Param
No.
Sym
Characteristic
Min
Typ
Max
Units
Conditions
Program Flash Memory
D130
E
P
Cell Endurance
10K
E/W -40
C to +85C
D131
V
PR
V
DD
 for Read
V
MIN
3.6
V
V
MIN
 = Minimum operating 
voltage
D132B V
PEW
Voltage for Self-Timed Erase or Write:
      V
DD
2.35
3.6
V
ENVREG tied to V
DD
      V
DDCORE
2.25
2.7
V
ENVREG tied to V
SS
D133A T
IW
Self-Timed Write Cycle Time
2.8
ms
Self-Timed Page Erase Cycle Time
33.0
ms
D134
T
RETD
Characteristic Retention
20
Year Provided no other 
specifications are violated
D135
I
DDP
Supply Current During Programming
3
14
mA
D1xxx T
WE
Writes per Erase Cycle
1
For each physical address
† Data in “Typ” column is at 3.3V, +25°C unless otherwise stated. These parameters are for design guidance 
only and are not tested.