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Microchip Technology ARD00354 Data Sheet

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© 2011 Microchip Technology Inc.
DS25073A-page 7
MCP6N11
TABLE 1-3:
DIGITAL ELECTRICAL SPECIFICATIONS
Electrical Characteristics: Unless otherwise indicated, T
A
= 25°C, V
DD
= 1.8V to 5.5V, V
SS
 = GND, EN/CAL = V
DD
, 
V
CM
 = V
DD
/2, V
DM
= 0V,  V
REF
= V
DD
/2, V
L
= V
DD
/2, R
L
= 10 k
Ω to V
L
, C
L
= 60 pF and G
DM
= G
MIN
; 
 and 
Parameters
Sym
 Min
 Typ
 Max
Units G
MIN
Conditions
EN/CAL Low Specifications
EN/CAL Logic 
Threshold, Low
V
IL
V
SS
—
0.2 V
DD
V
all
EN/CAL Input Current, 
Low
I
ENL
—
-0.1
—
nA
EN/CAL = 0V
GND Current
I
SS
-7
-2.5
—
µA
EN/CAL = 0V, V
DD
= 5.5V
Amplifier Output Leakage I
O(LEAK)
—
10
—
nA
EN/CAL = 0V
EN/CAL High Specifications
EN/CAL Logic 
Threshold, High
V
IH
0.8 V
DD
V
DD
V
all
EN/CAL Input Current, 
High
I
ENH
—
-0.01
—
nA
EN/CAL = V
DD
EN/CAL Dynamic Specifications
EN/CAL Input Hysteresis
V
HYST
—
0.2
—
V
all
EN/CAL Low to Amplifier 
Output High-Z Turn-off 
Time
t
OFF
—
3
10
µs
EN/CAL = 0.2V
DD
 to V
OUT
 = 0.1(V
DD
/2), 
V
DM
G
DM
 = 1 V, V
L
= 0V
EN/CAL High to 
Amplifier Output
On Time
t
ON
12
20
28
ms
EN/CAL = 0.8V
DD
 to V
OUT
 = 0.9(V
DD
/2), 
V
DM
G
DM
 = 1 V, V
L
= 0V
EN/CAL Low to 
EN/CAL High low time
t
ENLH
100
—
—
µs
Minimum time before externally
releasing EN/CAL (
)
Amplifier On to 
EN/CAL Low Setup Time
t
ENOL
—
100
—
µs
POR Dynamic Specifications
V
DD
 
↓ to Output Off
t
PHL
—
10
—
µs
all
V
L
= 0V,  V
DD
= 1.8V to 
V
PRL
– 0.1V  step,
90% of V
OUT
 change
V
DD
 
↑ to Output On
t
PLH
140
250
360
ms
V
L
= 0V,  V
DD
= 0V to V
PRH
+ 0.1V  step,
90% of V
OUT
 change
Note 1:
For design guidance only; not tested.
TABLE 1-4:
TEMPERATURE SPECIFICATIONS
Electrical Characteristics: Unless otherwise indicated, all limits are specified for: V
DD
= 1.8V to 5.5V, V
SS
= GND.
Parameters
Sym
Min
Typ
Max
Units
Conditions
Temperature Ranges
Specified Temperature Range
T
A
-40
—
+125
°C
Operating Temperature Range
T
A
-40
—
+125
°C
)
Storage Temperature Range
T
A
-65
—
+150
°C
Thermal Package Resistances
Thermal Resistance, 8L-SOIC
θ
JA
—
150
—
°C/W
Thermal Resistance, 8L-TDFN (2×3)
θ
JA
—
53
—
°C/W
Note 1:
Operation must not cause T
J
 to exceed the Absolute Maximum Junction Temperature specification (+150°C).