Microchip Technology GPIODM-KPLCD Data Sheet

Page of 438
© 2009 Microchip Technology Inc.
 
DS39632E-page 381
PIC18F2455/2550/4455/4550
TABLE 28-1:
MEMORY PROGRAMMING REQUIREMENTS    
 
     
DC Characteristics
Standard Operating Conditions (unless otherwise stated)
Operating temperature -40°C 
≤ T
A
 
≤ +85°C for industrial 
Param
No.
Sym
Characteristic
Min
Typ†
Max
Units
Conditions
Internal Program Memory 
Programming Specifications
(1)
D110
V
IHH
Voltage on MCLR/V
PP
/RE3 pin
9.00
13.25
V
(Note 3)
D113
I
DDP
Supply Current during 
Programming
10
mA
Data EEPROM Memory
D120
E
D
Byte Endurance
100K
1M
E/W -40
°C to +85°C
D121
V
DRW
V
DD
 for Read/Write
V
MIN
5.5
V
Using EECON to read/write
V
MIN
 = Minimum operating 
voltage
D122
T
DEW
Erase/Write Cycle Time
4
ms
D123
T
RETD
Characteristic Retention
40
Year Provided no other 
specifications are violated
D124
T
REF
Number of Total Erase/Write 
Cycles before Refresh
(2)
1M
10M
E/W -40°C to +85°C 
Program Flash Memory
D130
E
P
Cell Endurance
10K
100K
E/W -40
°C to +85°C
D131
V
PR
V
DD
 for Read
V
MIN
5.5
V
V
MIN
 = Minimum operating 
voltage
D132
V
IE
V
DD
 for Bulk Erase
3.2
(4)
5.5
V
Using ICSP™ port only
D132A V
IW
V
DD
 for All Erase/Write 
Operations (except bulk erase)
V
MIN
5.5
V
Using ICSP port or 
self-erase/write
D133A T
IW
Self-Timed Write Cycle Time
2
ms
D134
T
RETD
Characteristic Retention
40
100
Year Provided no other 
specifications are violated
† Data in “Typ” column is at 5.0V, 25°C unless otherwise stated. These parameters are for design guidance 
only and are not tested.
Note 1: These specifications are for programming the on-chip program memory through the use of table write 
instructions.
2: Refer to Section 7.7 “Using the Data EEPROM” for a more detailed discussion on data EEPROM 
endurance.
3: Required only if Single-Supply Programming is disabled.
4: Minimum voltage is 3.2V for PIC18LF devices in the family. Minimum voltage is 4.2V for PIC18F devices in 
the family.