Microchip Technology MCP1630DM-DDBS1 Data Sheet
PIC12F683
DS41211D-page 120
©
2007 Microchip Technology Inc.
15.4
DC Characteristics:
PIC12F683
-E (Extended)
DC CHARACTERISTICS
Standard Operating Conditions (unless otherwise stated)
Operating temperature
Operating temperature
-40°C
≤
T
A
≤
+125°C for extended
Param
No.
Device Characteristics
Min
Typ†
Max
Units
Conditions
V
DD
Note
D020E
Power-down Base
Current (I
Current (I
PD
)
(2)
—
0.05
9
μ
A
2.0
WDT, BOR, Comparators, V
REF
and
T1OSC disabled
—
0.15
11
μ
A
3.0
—
0.35
15
μ
A
5.0
D021E
—
1
17.5
μ
A
2.0
WDT Current
(1)
—
2
19
μ
A
3.0
—
3
22
μ
A
5.0
D022E
—
42
65
μ
A
3.0
BOR Current
(1)
—
85
127
μ
A
5.0
D023E
—
32
45
μ
A
2.0
Comparator Current
(1)
, both
comparators enabled
—
60
78
μ
A
3.0
—
120
160
μ
A
5.0
D024E
—
30
70
μ
A
2.0
CV
REF
Current
(1)
(high range)
—
45
90
μ
A
3.0
—
75
120
μ
A
5.0
D025E*
—
39
91
μ
A
2.0
CV
REF
Current
(1)
(low range)
—
59
117
μ
A
3.0
—
98
156
μ
A
5.0
D026E
—
4.5
25
μ
A
2.0
T1OSC Current
(1)
, 32.768 kHz
—
5
30
μ
A
3.0
—
6
40
μ
A
5.0
D027E
—
0.30
12
μ
A
3.0
A/D Current
(1)
, no conversion in
progress
—
0.36
16
μ
A
5.0
*
These parameters are characterized but not tested.
† Data in “Typ” column is at 5.0V, 25°C unless otherwise stated. These parameters are for design guidance
only and are not tested.
Note 1:
The peripheral current is the sum of the base I
DD
or I
PD
and the additional current consumed when this
peripheral is enabled. The peripheral
Δ
current can be determined by subtracting the base I
DD
or I
PD
current from this limit. Max values should be used when calculating total current consumption.
2:
The power-down current in Sleep mode does not depend on the oscillator type. Power-down current is
measured with the part in Sleep mode, with all I/O pins in high-impedance state and tied to V
measured with the part in Sleep mode, with all I/O pins in high-impedance state and tied to V
DD
.