Microchip Technology MCP1630DM-DDBS1 Data Sheet

Page of 176
PIC12F683
DS41211D-page 122
©
 2007 Microchip Technology Inc.
D100
I
ULP
Ultra Low-Power Wake-Up 
Current
200
nA
See Application Note AN879, 
Using the Microchip Ultra
Low-Power Wake-up Module
” 
(DS00879)
Capacitive Loading Specs on 
Output Pins
D101*
COSC2
OSC2 pin
15
pF
In XT, HS and LP modes when 
external clock is used to drive 
OSC1
D101A* C
IO
All I/O pins 
50
pF
Data EEPROM Memory
D120
E
D
Byte Endurance
100K
1M
E/W
-40°C 
 T
A
 
≤ 
+85°C
D120A
E
D
Byte Endurance
10K
100K
E/W
+85°C 
 T
A
 
≤ 
+125°C
D121
V
DRW
V
DD
 for Read/Write
V
MIN
5.5
V
Using EECON1 to read/write
V
MIN
 = Minimum operating 
voltage
D122
T
DEW
Erase/Write Cycle Time
5
6
ms
D123
T
RETD
Characteristic Retention
40
Year
Provided no other specifications 
are violated
D124
T
REF
Number of Total Erase/Write 
Cycles before Refresh
(4)
1M
10M
E/W
-40°C 
 T
A
 
≤ 
+85°C
Program Flash Memory
D130
E
P
Cell Endurance
10K
100K
E/W
-40°C 
 T
A
 
≤ 
+85°C
D130A
E
D
Cell Endurance
1K
10K
E/W
+85°C 
 T
A
 
≤ 
+125°C
D131
V
PR
V
DD
 for Read
V
MIN
5.5
V
V
MIN
 = Minimum operating 
voltage
D132
V
PEW
V
DD
 for Erase/Write
4.5
5.5
V
D133
T
PEW
Erase/Write cycle time
2
2.5
ms
D134
T
RETD
Characteristic Retention
40
Year
Provided no other specifications 
are violated
15.5
DC Characteristics: 
PIC12F683-I (Industrial)
 PIC12F683-E (Extended) (Continued)
DC CHARACTERISTICS
Standard Operating Conditions (unless otherwise stated)
Operating temperature
-40°C 
 T
A
 
 +85°C for industrial
-40°C 
 T
A
 
 +125°C for extended
Param
No.
Sym
Characteristic
Min
Typ†
Max
Units
Conditions
*
These parameters are characterized but not tested.
Data in “Typ” column is at 5.0V, 25°C unless otherwise stated. These parameters are for design guidance only and are 
not tested.
Note
1:
In RC oscillator configuration, the OSC1/CLKIN pin is a Schmitt Trigger input. It is not recommended to use an external 
clock in RC mode.
2:
Negative current is defined as current sourced by the pin.
3:
The leakage current on the MCLR pin is strongly dependent on the applied voltage level. The specified levels represent 
normal operating conditions. Higher leakage current may be measured at different input voltages.
4:
See Section 10.4.1 “Using the Data EEPROM” for additional information.
5:
Including OSC2 in CLKOUT mode.