Microchip Technology MA330024 Data Sheet
2009-2014 Microchip Technology Inc.
DS70000591F-page 109
dsPIC33FJ32GS406/606/608/610 and dsPIC33FJ64GS406/606/608/610
5.0
FLASH PROGRAM MEMORY
The dsPIC33FJ32GS406/606/608/610 and
dsPIC33FJ64GS406/606/608/610 devices contain
internal Flash program memory for storing and execut-
ing application code. The memory is readable, writable
and erasable during normal operation over the entire
V
dsPIC33FJ64GS406/606/608/610 devices contain
internal Flash program memory for storing and execut-
ing application code. The memory is readable, writable
and erasable during normal operation over the entire
V
DD
range.
Flash memory can be programmed in two ways:
• In-Circuit Serial Programming™ (ICSP™)
• Run-Time Self-Programming (RTSP)
• Run-Time Self-Programming (RTSP)
ICSP allows a dsPIC33FJ32GS406/606/608/610 and
dsPIC33FJ64GS406/606/608/610 device to be serially
programmed while in the end application circuit. This is
done with two lines for programming clock and
programming data (one of the alternate programming
dsPIC33FJ64GS406/606/608/610 device to be serially
programmed while in the end application circuit. This is
done with two lines for programming clock and
programming data (one of the alternate programming
pin pairs: PGEC1/PGED1, PGEC2/PGED2 or PGEC3/
PGED3), and three other lines for power (V
PGED3), and three other lines for power (V
DD
), ground
(V
SS
) and Master Clear (MCLR). This allows customers
to manufacture boards with unprogrammed devices
and then program the Digital Signal Controller (DSC)
just before shipping the product. This also allows the
most recent firmware or a custom firmware to be
programmed.
and then program the Digital Signal Controller (DSC)
just before shipping the product. This also allows the
most recent firmware or a custom firmware to be
programmed.
RTSP is accomplished using TBLRD (Table Read) and
TBLWT
TBLWT
(Table Write) instructions. With RTSP, the user
application can write program memory data, either in
blocks or ‘rows’ of 64 instructions (192 bytes) at a time,
or a single program memory word, and erase program
memory in blocks or ‘pages’ of 512 instructions
(1536 bytes) at a time.
blocks or ‘rows’ of 64 instructions (192 bytes) at a time,
or a single program memory word, and erase program
memory in blocks or ‘pages’ of 512 instructions
(1536 bytes) at a time.
5.1
Table Instructions and Flash
Programming
Programming
Regardless of the method used, all programming of
Flash memory is done with the Table Read and Table
Write instructions. These allow direct read and write
access to the program memory space from the data
memory while the device is in normal operating mode.
The 24-bit target address in the program memory is
formed using bits<7:0> of the TBLPAG register and the
Effective Address (EA) from a W register specified in
the table instruction, as shown in
Flash memory is done with the Table Read and Table
Write instructions. These allow direct read and write
access to the program memory space from the data
memory while the device is in normal operating mode.
The 24-bit target address in the program memory is
formed using bits<7:0> of the TBLPAG register and the
Effective Address (EA) from a W register specified in
the table instruction, as shown in
The TBLRDL and the TBLWTL instructions are used to
read or write to bits<15:0> of program memory.
TBLRDL
read or write to bits<15:0> of program memory.
TBLRDL
and TBLWTL can access program memory in
both Word and Byte modes.
The TBLRDH and TBLWTH instructions are used to read
or write to bits<23:16> of program memory. TBLRDH
and TBLWTH can also access program memory in Word
or Byte mode.
or write to bits<23:16> of program memory. TBLRDH
and TBLWTH can also access program memory in Word
or Byte mode.
FIGURE 5-1:
ADDRESSING FOR TABLE REGISTERS
Note 1: This data sheet summarizes the features
of the dsPIC33FJ32GS406/606/608/610
and dsPIC33FJ64GS406/606/608/610
families of devices. It is not intended to
be a comprehensive reference source.
To complement the information in this
data sheet, refer to “Flash Program-
ming” (DS70191) in the “dsPIC33/PIC24
Family Reference Manual”, which is
available from the Microchip web site
(
and dsPIC33FJ64GS406/606/608/610
families of devices. It is not intended to
be a comprehensive reference source.
To complement the information in this
data sheet, refer to “Flash Program-
ming” (DS70191) in the “dsPIC33/PIC24
Family Reference Manual”, which is
available from the Microchip web site
(
www.microchip.com
). The information in
this data sheet supersedes the
information in the FRM.
information in the FRM.
2: Some registers and associated bits
described in this section may not be
available on all devices. Refer to
available on all devices. Refer to
in
this data sheet for device-specific register
and bit information.
and bit information.
0
Program Counter
24 Bits
Program Counter
TBLPAG Reg
8 Bits
Working Reg EA
16 Bits
Byte
24-Bit EA
0
1/0
Select
Using
Table Instruction
Table Instruction
Using
User/Configuration
Space Select
Space Select