Microchip Technology MA330016 Data Sheet

DS70290J-page 60

© 2007-2011 Microchip Technology Inc.

; Set up NVMCON for row programming operations

MOV

#0x4001, W0

;

MOV

W0, NVMCON

; Initialize NVMCON

; Set up a pointer to the first program memory location to be written
; program memory selected, and writes enabled

MOV

#0x0000, W0

; 

MOV

W0, TBLPAG

; Initialize PM Page Boundary SFR

MOV

#0x6000, W0

; An example program memory address

; Perform the TBLWT instructions to write the latches
; 0th_program_word

MOV

#LOW_WORD_0, W2

; 

MOV

#HIGH_BYTE_0, W3

; 

TBLWTL W2, [W0]

; Write PM low word into program latch

TBLWTH W3, [W0++]

; Write PM high byte into program latch

; 1st_program_word

MOV

#LOW_WORD_1, W2

; 

MOV

#HIGH_BYTE_1, W3 

; 

TBLWTL W2, [W0]

; Write PM low word into program latch

TBLWTH W3, [W0++] 

; Write PM high byte into program latch

;  2nd_program_word

MOV

#LOW_WORD_2, W2

; 

MOV

#HIGH_BYTE_2, W3

; 

TBLWTL W2,

 

[W0] 

; Write PM low word into program latch

TBLWTH W3,

 

[W0++]

; Write PM high byte into program latch

•
•
•

; 63rd_program_word

MOV

#LOW_WORD_31, W2

; 

MOV

#HIGH_BYTE_31, W3

; 

TBLWTL W2,

 

[W0] 

; Write PM low word into program latch

TBLWTH W3,

 

[W0++]

; Write PM high byte into program latch

DISI

#5

; Block all interrupts with priority <7
; for next 5 instructions

MOV

#0x55, W0

MOV

W0, NVMKEY 

; Write the 55 key 

MOV    #0xAA, W1             

;

MOV

W1, NVMKEY  

; Write the AA key

BSET

NVMCON, #WR

; Start the erase sequence 

NOP 

; Insert two NOPs after the

NOP

; erase command is asserted