Microchip Technology MCP1631RD-MCC2 Data Sheet

 2006-2012 Microchip Technology Inc.

DS41291G-page 115

The Data EEPROM and Flash program memory are
readable and writable during normal operation (full V

DD

range). These memories are not directly mapped in the
register file space. Instead, they are indirectly
addressed through the Special Function Registers
(SFRs). There are six SFRs used to access these
memories:
• EECON1
• EECON2
• EEDAT
• EEDATH
• EEADR
• EEADRH (bit 4 on PIC16F886/PIC16F887 only)
When interfacing the data memory block, EEDAT holds
the 8-bit data for read/write, and EEADR holds the
address of the EEDAT location being accessed. These
devices have 256 bytes of data EEPROM with an
address range from 0h to 0FFh.
When accessing the program memory block of the
PIC16F886/PIC16F887 devices, the EEDAT and EED-
ATH registers form a 2-byte word that holds the 14-bit
data for read/write, and the EEADR and EEADRH reg-
isters form a 2-byte word that holds the 12-bit address
of the EEPROM location being read. The PIC16F882
devices have 2K words of program EEPROM with an
address range from 0h to 07FFh. The PIC16F883/
PIC16F884 devices have 4K words of program
EEPROM with an address range from 0h to 0FFFh.
The program memory allows one-word reads.
The EEPROM data memory allows byte read and write.
A byte write automatically erases the location and
writes the new data (erase before write).
The write time is controlled by an on-chip timer. The
write/erase voltages are generated by an on-chip
charge pump rated to operate over the voltage range of
the device for byte or word operations.
Depending on the setting of the Flash Program
Memory Self Write Enable bits WRT<1:0> of the
Configuration Word Register 2, the device may or may
not be able to write certain blocks of the program
memory. However, reads from the program memory
are allowed.
When the device is code-protected, the CPU may
continue to read and write the data EEPROM memory
and Flash program memory. When code-protected, the
device programmer can no longer access data or
program memory. 

The EEADR and EEADRH registers can address up to
a maximum of 256 bytes of data EEPROM or up to a
maximum of 8K words of program EEPROM. 
When selecting a program address value, the MSB of
the address is written to the EEADRH register and the
LSB is written to the EEADR register. When selecting a
data address value, only the LSB of the address is
written to the EEADR register. 

10.1.1

EECON1 AND EECON2 REGISTERS

EECON1 is the control register for EE memory
accesses.
Control bit EEPGD determines if the access will be a pro-
gram or data memory access. When clear, as it is when
reset, any subsequent operations will operate on the data
memory. When set, any subsequent operations will oper-
ate on the program memory. Program memory can only
be read.
Control bits RD and WR initiate read and write,
respectively. These bits cannot be cleared, only set, in
software. They are cleared in hardware at completion
of the read or write operation. The inability to clear the
WR bit in software prevents the accidental, premature
termination of a write operation.
The WREN bit, when set, will allow a write operation to
data EEPROM. On power-up, the WREN bit is clear.
The WRERR bit is set when a write operation is
interrupted by a MCLR or a WDT Time-out Reset
during normal operation. In these situations, following
Reset, the user can check the WRERR bit and rewrite
the location.
Interrupt flag bit EEIF of the PIR2 register is set when
write is complete. It must be cleared in the software.
EECON2 is not a physical register. Reading EECON2
will read all ‘0’s. The EECON2 register is used
exclusively in the data EEPROM write sequence.