Microchip Technology MCP1631RD-MCC2 Data Sheet

 2006-2012 Microchip Technology Inc.

DS41291G-page 119

10.1.4

READING THE FLASH PROGRAM 
MEMORY

To read a program memory location, the user must
write the Least and Most Significant address bits to the
EEADR and EEADRH registers, set the EEPGD con-
trol bit of the EECON1 register, and then set control bit
RD. Once the read control bit is set, the program mem-
ory Flash controller will use the second instruction
cycle to read the data. This causes the second instruc-
tion immediately following the “BSF EECON1,RD”
instruction to be ignored. The data is available in the
very next cycle, in the EEDAT and EEDATH registers;
therefore, it can be read as two bytes in the following
instructions. 

EEDAT and EEDATH registers will hold this value until
another read or until it is written to by the user.

Note 1: The two instructions following a program

memory read are required to be NOPs.
This prevents the user from executing a
two-cycle instruction on the next
instruction after the RD bit is set.

2: If the WR bit is set when EEPGD = 1, it

will be immediately reset to ‘0’ and no
operation will take place.

BANKSEL EEADR

;

MOVLW

MS_PROG_EE_ADDR

;

MOVWF

EEADRH

;MS Byte of Program Address to read

MOVLW

LS_PROG_EE_ADDR

;

MOVWF

EEADR

;LS Byte of Program Address to read

BANKSEL EECON1

;

BSF

EECON1, EEPGD

;Point to PROGRAM memory

BSF

EECON1, RD

;EE Read

;
    

;First instruction after BSF EECON1,RD executes normally

NOP
NOP

;Any instructions here are ignored as program
;memory is read in second cycle after BSF EECON1,RD

;

BANKSEL EEDAT

;

MOVF

EEDAT, W

;W = LS Byte of Program Memory

MOVWF

LOWPMBYTE

;

MOVF

EEDATH, W

;W = MS Byte of Program EEDAT

MOVWF

HIGHPMBYTE

;

BCF

STATUS, RP1

;Bank 0

R

e

qu

ired

S

eq

uen

ce