Microchip Technology AC244026 Data Sheet
© 2009 Microchip Technology Inc.
DS41341E-page 219
PIC16F72X/PIC16LF72X
Program Flash Memory
D130
E
P
Cell Endurance
100
1k
—
E/W
Temperature during programming:
10°C
10°C
≤ T
A
≤ 40°C
D131
V
DD
for Read
V
MIN
—
—
V
Voltage on MCLR/V
PP
during
Erase/Program
8.0
—
9.0
V
Temperature during programming:
10°C
10°C
≤ T
A
≤ 40°C
V
DD
for Bulk Erase
2.7
3
—
V
Temperature during programming:
10°C
10°C
≤ T
A
≤ 40°C
D132
V
PEW
V
DD
for Write or Row Erase
2.7
—
—
V
V
MIN
= Minimum operating voltage
V
MAX
= Maximum operating
voltage
I
PPPGM
Current on MCLR/V
PP
during
Erase/Write
—
—
5.0
mA
Temperature during programming:
10°C
10°C
≤ T
A
≤ 40°C
I
DDPGM
Current on V
DD
during Erase/
Write
—
5.0
mA
Temperature during programming:
10°C
10°C
≤ T
A
≤ 40°C
D133
T
PEW
Erase/Write cycle time
—
2.8
ms
Temperature during programming:
10°C
10°C
≤ T
A
≤ 40°C
D134
T
RETD
Characteristic Retention
40
—
—
Year
Provided no other specifications
are violated
are violated
V
CAP
Capacitor Charging
D135
Charging current
—
200
—
μ
A
D135A
Source/sink capability when
charging complete
charging complete
—
0.0
—
mA
23.4
DC Characteristics: PIC16F72X/PIC16LF72X-I/E (Continued)
DC CHARACTERISTICS
Standard Operating Conditions (unless otherwise stated)
Operating temperature -40°C
Operating temperature -40°C
≤ T
A
≤ +85°C for industrial
-40°C
≤ T
A
≤ +125°C for extended
Param
No.
Sym.
Characteristic
Min.
Typ†
Max.
Units
Conditions
Legend:
TBD = To Be Determined
*
These parameters are characterized but not tested.
†
Data in “Typ” column is at 3.0V, 25°C unless otherwise stated. These parameters are for design guidance only and are
not tested.
not tested.
Note 1: In RC oscillator configuration, the OSC1/CLKIN pin is a Schmitt Trigger input. It is not recommended to use an external
clock in RC mode.
2: Negative current is defined as current sourced by the pin.
3: The leakage current on the MCLR pin is strongly dependent on the applied voltage level. The specified levels represent
3: The leakage current on the MCLR pin is strongly dependent on the applied voltage level. The specified levels represent
normal operating conditions. Higher leakage current may be measured at different input voltages.
4: Including OSC2 in CLKOUT mode.