Microchip Technology AC164331 Data Sheet
PA
G
E
3
2
Cu
rre
n
t An
alo
g
/In
te
rf
ac
e
Fa
mil
y
Pr
oduc
ts
M
IXED SIGNAL –
Digit
a
l Po
tentio
met
e
rs
Pa
rt
#
Nu
m
b
e
r of
Ta
p
s
M
e
mo
ry
N
u
mb
e
r p
e
r
Pa
ck
ag
e
In
te
rfa
c
e
R
e
si
s
tan
ce
(k
Oh
ms
)
IN
L
(m
a
x
)
D
N
L
(
m
ax
)
T
em
p
. R
a
ng
e
(°
C
)
C
o
m
m
en
ts
P
a
c
k
a
g
e
s
M
C
P
401
1
6
4
V
o
la
ti
le
1
U
p
/D
ow
n
2
.1
, 5,
10
, 50
0.
5
0
.5
-4
0 t
o
+
1
2
5
P
o
te
nt
io
m
e
te
r
m
o
de
8
-Pi
n
S
OIC,
8
-P
in
MSOP
,
8-
P
in
2x3
D
F
N
M
C
P
401
2
64
Vo
la
ti
le
1
Up
/Do
w
n
2.
1,
5,
10
, 50
0.
5
0.
5
-4
0
to
+1
2
5
R
h
eo
st
at
m
o
d
e
6-
P
in
SO
T
-23
M
C
P
401
3
6
4
V
o
la
ti
le
1
U
p
/D
ow
n
2
.1
, 5,
10
, 50
0.
5
0
.5
-4
0 t
o
+
1
2
5
P
o
te
nt
io
m
e
te
r
to
V
SS
6-
P
in
SO
T
-23
M
C
P
401
4
64
Vo
la
ti
le
1
Up
/Do
w
n
2.
1,
5,
10
, 50
0.
5
0.
5
-4
0
to
+1
2
5
R
h
eo
st
at
t
o
V
SS
5-
P
in
SO
T
-23
M
C
P
402
1
6
4
N
on
vol
a
ti
le
1
U
p/
D
o
w
n
2.
1,
5,
10
, 50
0.
5
0
.5
-4
0 t
o
+
1
2
5
P
o
te
n
ti
o
me
te
r mo
d
e
, S
h
u
td
o
wn
,
Wi
pe
rL
oc
k™
T
e
c
h
no
lo
gy
8
-Pi
n
S
OIC,
8
-P
in
MSOP
,
8-
P
in
2x3
D
F
N
M
C
P
402
2
64
N
o
n
v
ol
at
ile
1
Up
/Do
w
n
2.
1,
5,
10
, 50
0.
5
0.
5
-4
0
to
+1
2
5
R
h
eo
st
at
m
o
d
e
, Sh
ut
d
o
w
n
,
Wi
pe
rL
oc
k™
T
e
c
h
no
lo
gy
6-
P
in
SO
T
-23
M
C
P
402
3
6
4
N
on
vol
a
ti
le
1
U
p/
D
o
w
n
2.
1,
5,
10
, 50
0.
5
0
.5
-4
0 t
o
+
1
2
5
Po
te
n
ti
o
me
te
r to
V
SS
, Wi
pe
rLoc
k™
T
e
ch
no
lo
gy
6-
P
in
SO
T
-23
M
C
P
402
4
64
N
o
n
v
ol
at
ile
1
Up
/Do
w
n
2.
1,
5,
10
, 50
0.
5
0.
5
-4
0
to
+1
2
5
R
h
eo
st
at
t
o
V
SS
, Sh
ut
d
o
w
n
, W
ipe
rL
o
c
k™
T
e
ch
no
lo
gy
5-
P
in
SO
T
-23
M
C
P
410
10
25
6
V
o
la
ti
le
1
S
P
I
1
0
1
1
-40
t
o
+
8
5
P
ot
e
n
ti
o
m
e
te
r
m
o
de
,
S
h
u
tdo
w
n
8-
P
in
PD
IP
, 8-
P
in
SO
IC
M
C
P
410
50
25
6
Vo
la
ti
le
1
SP
I
50
1
1
-4
0
t
o
+8
5
P
o
te
n
ti
o
me
te
r mo
d
e
, S
h
u
td
o
wn
8
-Pi
n
P
D
IP
, 8
-Pi
n
S
OIC
M
C
P4
1
1
0
0
2
5
6
V
ol
at
ile
1
SP
I
1
0
0
1
1
-4
0 t
o
+
8
5
P
o
ten
ti
om
et
er
m
o
d
e
,
Sh
ut
d
o
w
n
8
-Pi
n P
D
IP
, 8
-Pi
n S
O
IC
M
C
P
420
10
25
6
Vo
la
ti
le
2
SP
I
10
1
1
-4
0
t
o
+8
5
P
o
te
n
ti
o
me
te
r mo
d
e
, S
h
u
td
o
wn
1
4
-P
in
PD
IP
, 1
4
-P
in
SOIC
,
14
-P
in
T
S
S
O
P
M
C
P
420
50
25
6
V
o
la
ti
le
2
S
P
I
5
0
1
1
-40
t
o
+
8
5
P
ot
e
n
ti
o
m
e
te
r
m
o
de
,
S
h
u
tdo
w
n
1
4
-P
in
PD
IP
, 1
4
-P
in
SOIC
,
14
-P
in
T
S
S
O
P
M
C
P
421
00
25
6
Vo
la
ti
le
2
SP
I
100
1
1
-4
0
t
o
+8
5
P
o
te
n
ti
o
me
te
r mo
d
e
, S
h
u
td
o
wn
1
4
-P
in
PD
IP
, 1
4
-P
in
SOIC
,
14
-P
in
T
S
S
O
P
M
IXED SIG
NAL –
Freq
uenc
y-to
-V
ol
ta
ge
/V
o
lt
a
g
e
-to-F
re
que
ncy
Conv
erters
P
a
rt
#
F
re
qu
en
cy
R
a
n
g
e
(
k
H
z
)
F
ul
l
Sc
al
e
(
p
pm
F
S
/°
C
)
N
o
n
-l
in
e
a
ri
ty
(
%
FS
)
T
em
p.
R
a
n
g
e
(
°C
)
P
a
ck
ag
es
T
C
9
4
0
0
1
0
0
±
4
0
±
0
.0
5
-4
0
t
o
+8
5
1
4
-Pi
n
PDIP
, 1
4
-P
in
SOI
C
T
C
94
01
10
0
±4
0
±0
.0
2
-4
0
t
o
+8
5
1
4
-Pi
n
PDIP
, 1
4
-P
in
SOI
C
TC
9
4
0
2
10
0
±
10
0
±
0
.25
-4
0 t
o
+
8
5
1
4-
P
in
P
D
IP
, 14
-P
in
S
O
IC
MIXED SIGNAL –
D/A Con
v
e
rte
rs
Pa
rt
#
Re
s
o
lu
ti
on
(Bi
ts
)
DACs
pe
r
P
a
ck
ag
e
In
te
rf
a
c
e
V
RE
F
Ou
tp
u
t Se
tt
lin
g
T
ime
(
μ
s)
DNL
(L
S
B
)
T
y
p
ica
l S
tand
b
y
C
u
rre
n
t (
μ
A)
T
y
p
ic
a
l Op
e
ra
tin
g
C
u
rre
n
t (
μ
A)
T
e
m
p
. R
a
ng
e (
°C
)
Pa
ck
ag
es
T
C
13
20
8
1
SM
Bu
s
Ex
t
10
±0
.8
0.
1
35
0
-4
0
to
+8
5
8
-Pi
n
MS
OP
,
8
-P
in
SOIC
TC
1
3
2
1
10
1
S
M
B
us
E
x
t
1
0
±
2
0
.1
35
0
-40
t
o
+
8
5
8
-P
in
M
S
O
P
, 8
-Pi
n
S
O
IC
M
C
P
482
1
12
1
SP
I
Y
4.
5
1
0.
3
33
0
-4
0
t
o
+
125
8
-Pi
n
P
D
IP
, 8
-Pi
n
S
OIC,
8
-P
in
MSOP
M
C
P
482
2
1
2
2
S
P
I
Y
4.
5
1
0
.3
4
1
5
-4
0
t
o
+
125
8-
P
in
PD
IP
, 8-
P
in
SO
IC
,
8
-Pi
n M
S
O
P
M
C
P
492
1
12
1
SP
I
Ex
t
4.
5
0.
75
1
17
5
-4
0
t
o
+
125
8
-Pi
n
P
D
IP
, 8
-Pi
n
S
OIC,
8
-P
in
MSOP
M
C
P
492
2
1
2
2
S
P
I
E
xt
4.
5
0
.7
5
1
35
0
-40
t
o
+
125
14
-P
in
P
D
IP
, 1
4
-P
in
S
O
IC
,
1
4
-P
in
TS
S
O
P
N
O
T
E
:
T
he
an
al
og
ou
tp
u
t i
s
v
o
lt
a
g
e
.