Freescale Semiconductor MC9S12G128 Evaluation Board TWR-S12G128-KIT TWR-S12G128-KIT Data Sheet

Product codes
TWR-S12G128-KIT
Page of 1292
32 KByte Flash Module (S12FTMRG32K1V1)
MC9S12G Family Reference Manual, Rev.1.23
Freescale Semiconductor
863
Upon clearing CCIF to launch the Read Once command, a Read Once phrase is fetched and stored in the
FCCOB indexed register. The CCIF flag will set after the Read Once operation has completed. Valid
phrase index values for the Read Once command range from 0x0000 to 0x0007. During execution of the
Read Once command, any attempt to read addresses within P-Flash block will return invalid data.
8
25.4.6.5
Program P-Flash Command
The Program P-Flash operation will program a previously erased phrase in the P-Flash memory using an
embedded algorithm.
CAUTION
A P-Flash phrase must be in the erased state before being programmed.
Cumulative programming of bits within a Flash phrase is not allowed.
Upon clearing CCIF to launch the Program P-Flash command, the Memory Controller will program the
data words to the supplied global address and will then proceed to verify the data words read back as
expected. The CCIF flag will set after the Program P-Flash operation has completed.
Table 25-39. Read Once Command Error Handling
Register
Error Bit
Error Condition
FSTAT
ACCERR
Set if CCOBIX[2:0] != 001 at command launch
Set if command not available in current mode (see
)
Set if an invalid phrase index is supplied
FPVIOL
None
MGSTAT1
Set if any errors have been encountered during the read
MGSTAT0
Set if any non-correctable errors have been encountered during the read
Table 25-40. Program P-Flash Command FCCOB Requirements
CCOBIX[2:0]
FCCOB Parameters
000
0x06
Global address [17:16] to
identify P-Flash block
001
Global address [15:0] of phrase location to be programmed
1
1
Global address [2:0] must be 000
010
Word 0 program value
011
Word 1 program value
100
Word 2 program value
101
Word 3 program value