Atmel Xplained Pro Evaluation Kit ATSAM4E-XPRO ATSAM4E-XPRO Data Sheet
Product codes
ATSAM4E-XPRO
SAM4E [DATASHEET]
Atmel-11157D-ATARM-SAM4E16-SAM4E8-Datasheet_12-Jun-14
1432
47.4.4 32.768 kHz Crystal Characteristics
47.4.5 3 to 20 MHz Crystal Oscillator Characteristics
Notes:
1. R
S
is the series resistor
2. R
S
= 100-200
Ω; Cs = 2.0 - 2.5 pF; C
M
= 2 – 1.5 fF (typ, worst case) using 1 k
Ω serial resistor on XOUT.
3. R
S
= 50-100
Ω; Cs = 2.0 - 2.5 pF; C
M
= 4 - 3 fF (typ, worst case).
4. R
S
= 25-50
Ω; Cs = 2.5 - 3.0 pF; C
M
= 7 - 5 fF (typ, worst case).
5. R
S
= 20-50
Ω; Cs = 3.2 - 4.0 pF; C
M
= 10 - 8 fF (typ, worst case).
Table 47-19.
Crystal Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
ESR
Equivalent Series Resistor (R
S
)
Crystal @ 32.768 kHz
—
50
100
k
Ω
C
M
Motional capacitance
Crystal @ 32.768 kHz
0.6
—
3
fF
C
SHUNT
Shunt capacitance
Crystal @ 32.768 kHz
0.6
—
2
pF
Table 47-20.
3 to 20 MHz Crystal Oscillator Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
f
REQ
Operating Frequency
Normal mode with crystal
3
16
20
MHz
—
Supply Ripple Voltage (on VDDPLL)
RMS value, 10 kHz to 10 MHz
—
—
30
mV
—
Duty Cycle
—
40
50
60
%
t
ON
Startup Time
3 MHz, C
SHUNT
= 3 pF
8 MHz, C
SHUNT
= 7 pF
16 MHz, C
SHUNT
= 7 pF with C
M
= 8 fF
16 MHz, C
SHUNT
= 7 pF with C
M
= 1.6 fF
20 MHz, C
SHUNT
= 7 pF
—
—
—
—
—
—
—
—
—
—
14.5
4
1.4
2.5
1
ms
I
DD_ON
Current consumption
(on VDDIO)
3 MHz
8 MHz
16 MHz
20 MHz
—
—
—
—
230
300
390
450
350
400
470
560
µA
P
ON
Drive level
3 MHz
8 MHz
16 MHz, 20 MHz
—
—
—
—
—
—
15
30
50
µW
R
F
Internal resistance
Between XIN and XOUT
—
0.5
—
M
Ω
C
LEXT
Maximum external capacitance
on XIN and XOUT
on XIN and XOUT
—
12.5
—
17.5
pF
C
L
Internal Equivalent Load Capacitance
Integrated Load Capacitance
(XIN and XOUT in series)
7.5
9.5
10.5
pF