Atmel Xplained Pro Evaluation Kit ATSAM4E-XPRO ATSAM4E-XPRO Data Sheet
Product codes
ATSAM4E-XPRO
SAM4E [DATASHEET]
Atmel-11157D-ATARM-SAM4E16-SAM4E8-Datasheet_12-Jun-14
1434
47.4.8 Crystal Oscillator Design Considerations Information
47.4.8.1 Choosing a Crystal
When choosing a crystal for the 32.768 kHz Slow Clock Oscillator or for the 3-20 MHz Oscillator, several
parameters must be taken into account. Important parameters between crystal and SAM4E specifications are as
follows:
parameters must be taken into account. Important parameters between crystal and SAM4E specifications are as
follows:
Load Capacitance
̶
C
CRYSTAL
is the equivalent capacitor value the oscillator must “show” to the crystal in order to oscillate
at the target frequency. The crystal must be chosen according to the internal load capacitance (C
L
) of
the on-chip oscillator. Having a mismatch for the load capacitance will result in a frequency drift.
Drive Level
̶
Crystal drive level
≥ Oscillator Drive Level. Having a crystal drive level number lower than the oscillator
specification may damage the crystal.
Equivalent Series Resistor (ESR)
̶
Crystal ESR
≤ Oscillator ESR Max. Having a crystal with ESR value higher than the oscillator may
cause the oscillator to not start.
Shunt Capacitance
̶
Max. crystal Shunt capacitance
≤ Oscillator Shunt Capacitance (
C
SHUNT
).
Having a crystal with ESR
value higher than the oscillator may cause the oscillator to not start.
47.4.8.2 Printed Circuit Board (PCB)
SAM4E oscillators are low-power oscillators requiring particular attention when designing PCB systems.
47.5
PLLA Characteristics
Table 47-23.
Supply Voltage Phase Lock Loop Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VDDPLL
Supply Voltage Range
1.08
1.2
1.32
V
Allowable Voltage Ripple
RMS value 10 kHz to 10 MHz
RMS value > 10 MHz
—
—
—
—
20
10
mV
Table 47-24.
PLLA Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
f
IN
Input Frequency
—
3
—
32
MHz
f
OUT
Output Frequency
—
80
—
240
MHz
I
PLL
Current Consumption
Active mode @ 80 MHz @1.2V
Active mode @ 96 MHz @1.2V
Active mode @ 160 MHz @1.2V
Active Mode @ 240 MHz @1.2V
—
—
—
—
0.94
1.2
2.1
3.34
1.2
1.5
2.5
4
mA
t
S
Settling Time
—
—
60
150
µs