Atmel Evaluation Kit for the SAM4E Series of Flash Microcontrollers ATSAM4E-EK ATSAM4E-EK Data Sheet

Product codes
ATSAM4E-EK
Page of 1506
SAM4E [DATASHEET]
Atmel-11157D-ATARM-SAM4E16-SAM4E8-Datasheet_12-Jun-14
1450
Table 47-51.
Dynamic Performance Characteristics
Parameter
Conditions
Min
Typ
Max
Units
Signal to Noise Ratio - SNR
2.4V < V
VDDIN 
<2.7V
2.7V < V
VDDIN 
<3.6V
47
56
58
61
70
74
dB
Total Harmonic Distortion - THD
2.4V < V
VDDIN 
<2.7V
2.7V < V
VDDIN 
<3.6V
-72
-76
-60
-68
dB
Signal to Noise and Distortion - SINAD
2.4V < V
VDDIN 
<2.7V
2.7V < V
VDDIN 
<3.6V
47
56
58
61
dB
Effective Number of Bits ENOB
2.4V < V
VDDIN 
<2.7V
2.7V < V
VDDIN 
<3.6V
7.5
9
9
10
12
12
bits
Table 47-52.
Analog Outputs
Parameter
Conditions
Min
Typ
Max
Units
Voltage Range
(1/6) x V
ADVREF
(5/6) x V
ADVREF
V
Slew Rate
Channel Output Current versus Slew Rate 
(IBCTL for DAC0 or DAC1, noted IBCTLCHx)
R
LOAD
 = 10 k
Ω/0 pF  <  C
LOAD
< 50 pF
IBCTLCHx = 00 
IBCTLCHx = 01
IBCTLCHx = 10
IBCTLCHx = 11
2.7
5.3
8
10.7
V/µs
Output Channel Current
Consumption
No resistive load
IBCTLCHx = 00 
IBCTLCHx = 01
IBCTLCHx = 10
IBCTLCHx = 11
0.23
0.45
0.67
0.89
mA
Settling Time
R
LOAD
 = 10 k
Ω/0 pF  <  C
LOAD
< 50 pF
0.5
µs
R
LOAD
Output Load Resistor
10
k
Ω
C
LOAD
Output Load Capacitor
30
50
pF