Atmel Evaluation Kit for the SAM4E Series of Flash Microcontrollers ATSAM4E-EK ATSAM4E-EK Data Sheet

Product codes
ATSAM4E-EK
Page of 1506
399
SAM4E [DATASHEET]
Atmel-11157D-ATARM-SAM4E16-SAM4E8-Datasheet_12-Jun-14
21.4.2.4 Data Read Optimization
The organization of the Flash in 128 bits (or 64 bits) is associated with two 128-bit (or 64-bit) prefetch buffers and
one 128-bit (or 64-bit) data read buffer, thus providing maximum system performance. This buffer is added in order
to store the requested data plus all the data contained in the 128-bit (64-bit) aligned data. This speeds up
sequential data reads if, for example, FWS is equal to 1 (see 
). The data read optimization is enabled
by default. If the SCOD bit in EEFC_FMR is set to 1, this buffer is disabled and the data read is no longer
optimized.
Note:
No consecutive data read accesses are mandatory to benefit from this optimization.
Figure 21-5.
Data Read Optimization for FWS = 1 
21.4.3 Flash Commands
The EEFC offers a set of commands to manage programming the Flash memory, locking and unlocking lock
regions, consecutive programming, locking and full Flash erasing, etc. 
Flash Access
Buffer (128bits)
Master Clock
ARM Request
       (32-bit)
XXX
Data To ARM
Bytes 0-15
Bytes 16-31
Bytes 0-15
Bytes 0-3
4-7
8-11
12-15
16-19
20-23
XXX
Bytes 16-31
@Byte 0
@ 4
@ 8
@ 12
@ 16
@ 20
@ 24
@ 28
@ 32
@ 36
XXX
Bytes 32-47
24-27
28-31
32-35
Table 21-2.
Set of Commands
Command
Value
Mnemonic
Get Flash descriptor
0x00
GETD
Write page
0x01
WP
Write page and lock
0x02
WPL
Erase page and write page
0x03
EWP
Erase page and write page then lock
0x04
EWPL
Erase all
0x05
EA
Erase pages
0x07
EPA
Set lock bit
0x08
SLB
Clear lock bit
0x09
CLB
Get lock bit
0x0A
GLB
Set GPNVM bit
0x0B
SGPB
Clear GPNVM bit
0x0C
CGPB
Get GPNVM bit
0x0D
GGPB