Atmel Evaluation Kit for the SAM4E Series of Flash Microcontrollers ATSAM4E-EK ATSAM4E-EK Data Sheet
Product codes
ATSAM4E-EK
403
SAM4E [DATASHEET]
Atmel-11157D-ATARM-SAM4E16-SAM4E8-Datasheet_12-Jun-14
Only one page can be programmed at a time. It is possible to program all the bits of a page (full page
programming) or only some of the bits of the page (partial page programming).
programming) or only some of the bits of the page (partial page programming).
Depending on the number of bits to be programmed within the page, the EEFC adapts the write operations
required to program the Flash.
required to program the Flash.
When the Programming Page command is given, the EEFC starts the programming sequence and all the bits
written at 0 in the latch buffer are cleared in the Flash memory array.
written at 0 in the latch buffer are cleared in the Flash memory array.
During programming, i.e. until FDRY rises, access to the Flash is not allowed.
Full Page Programming
To program a full page, all the bits of the page must be erased before writing the latch buffer and launching the WP
command. The latch buffer must be written in ascending order, starting from the first address of the page. See
command. The latch buffer must be written in ascending order, starting from the first address of the page. See
Partial Page Programming
To program only part of a page using the WP command, the following constraints must be respected:
Data to be programmed must be contained in integer multiples of 64-bit address-aligned words.
64-bit words can be programmed only if all the corresponding bits in the Flash array are erased (at logical
value 1).
value 1).
Programming Bytes
Individual bytes can be programmed using the partial page programming mode. In this case, an area of 64 bits
must be reserved for each byte, as shown in
must be reserved for each byte, as shown in
.