STMicroelectronics 19 V - 75 W SMPS using the L6563 and the L6566A EVL6566A-75WES4 EVL6566A-75WES4 Data Sheet
Product codes
EVL6566A-75WES4
L6563S
Electrical characteristics
Doc ID 16116 Rev 4
13/43
V
ZCDT
Triggering voltage
(negative-going edge)
0.5
0.7
0.9
V
I
ZCDb
Input bias current
V
ZCD
= 1 to 4.5 V
1
µA
I
ZCDsrc
Source current capability
-2.5
-4
mA
I
ZCDsnk
Sink current capability
2.5
5
mA
Tracking boost function
ΔV
Dropout voltage V
VFF
-V
TBO
I
TBO
= 0.2 mA
-20
20
mV
I
TBO
Linear operation
0
0.2
mA
I
INV
-I
TBO
current mismatch
I
TBO
= 25 µA to 0.2mA
-5.5
+1.0
%
I
INV
-I
TBO
current mismatch
I
TBO
= 25 µA to 0.2mA
T
J
= 25 °C
-4.0
+0
%
V
TBOclamp
Clamp voltage
(3)
V
VFF
= 4 V
2.9
3
3.1
V
I
TBO_Pull
Pull-up current
V
TBO
= 1 V
V
FF
=
V
MULT
= 0 V
2
μA
PWM_STOP
I
leak
High level leakage current
V
PWM_STOP
= Vcc
1
µA
V
L
Low level
I
PWM_STOP
= 0.5 mA
1
V
RUN function
I
RUN
Input bias current
V
RUN
= 0 to 3 V
-1
µA
V
DIS
Disable threshold
(3)
voltage falling
0.745
0.8
0.855
V
V
EN
Enable threshold
(3)
voltage rising
0.845 0.88 0.915
V
Start-up timer
t
START_DEL
Start-up delay
First cycle after wake-up
25
50
75
µs
t
START
Timer period
75
150
300
µs
Restart after V
CS
> V
CS_th
150
300
600
Voltage feedforward
V
VFF
Linear operation range
0.8
3
V
ΔV
Dropout V
MULTpk
-V
VFF
Vcc
< Vcc
On
800
mV
Vcc > or = to Vcc
On
20
ΔV
VFF
Line drop detection threshold
Below peak value
40
70
100
mV
ΔV
VFF
Line drop detection threshold
Below peak value
T
J
= 25 °C
50
70
90
mV
R
DISCH
Internal discharge resistor
T
J
= 25 °C
7.5
10
12.5
k
Ω
5
20
Table 4.
Electrical characteristics (continued)
Symbol
Parameter
Test condition
Min.
Typ. Max. Unit