On Semiconductor N/A BC 639 NPN Case type TO 92 I(C) 1.5 A BC639 Data Sheet
Product codes
BC639
BC637, BC639, BC639−16
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector − Emitter Breakdown Voltage (Note 1)
(I
C
= 10 mAdc, I
B
= 0)
BC637
BC639
V
(BR)CEO
60
80
−
−
−
−
Vdc
Collector − Emitter Zero−Gate Breakdown Voltage(Note 1)
(I
C
= 100 mAdc, I
B
= 0)
BC639−16
V
(BR)CES
120
−
−
Vdc
Collector − Base Breakdown Voltage
(I
C
= 100 mAdc, I
E
= 0)
BC637
BC639
V
(BR)CBO
60
80
−
−
−
−
Vdc
Emitter − Base Breakdown Voltage
(I
E
= 10 mAdc, I
C
= 0)
V
(BR)EBO
5.0
−
−
Vdc
Collector Cutoff Current
(V
CB
= 30 Vdc, I
E
= 0)
(V
CB
= 30 Vdc, I
E
= 0, T
A
= 125°C)
I
CBO
−
−
−
−
100
10
nAdc
mAdc
ON CHARACTERISTICS (Note 1)
DC Current Gain
(I
C
= 5.0 mAdc, V
CE
= 2.0 Vdc)
(I
C
= 150 mAdc, V
CE
= 2.0 Vdc)
BC637
BC639
BC639−16ZLT1
(I
C
= 500 mA, V
CE
= 2.0 V)
h
FE
25
40
40
100
25
−
−
−
−
−
−
160
160
250
−
−
Collector − Emitter Saturation Voltage
(I
C
= 500 mAdc, I
B
= 50 mAdc)
V
CE(sat)
−
−
0.5
Vdc
Base − Emitter On Voltage
(I
C
= 500 mAdc, V
CE
= 2.0 Vdc)
V
BE(on)
−
−
1.0
Vdc
DYNAMIC CHARACTERISTICS
Current Gain − Bandwidth Product
(I
C
= 50 mAdc, V
CE
= 2.0 Vdc, f = 100 MHz)
f
T
−
200
−
MHz
Output Capacitance
(V
CB
= 10 Vdc, I
E
= 0, f = 1.0 MHz)
C
ob
−
7.0
−
pF
Input Capacitance
(V
EB
= 0.5 Vdc, I
C
= 0, f = 1.0 MHz)
C
ib
−
50
−
pF
1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle 2.0%.
ORDERING INFORMATION
Device
Package
Shipping
†
BC637G
TO−92
(Pb−Free)
5000 Units / Bulk
BC637RL1G
TO−92
(Pb−Free)
2000 / Tape & Reel
BC639G
TO−92
(Pb−Free)
5000 Units / Bulk
BC639RL1G
TO−92
(Pb−Free)
2000 / Tape & Reel
BC639ZL1G
TO−92
(Pb−Free)
2000 / Ammo Box
BC639−16ZL1G
TO−92
(Pb−Free)
2000 / Ammo Box
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.